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Marcus S. Dahlem

Researcher at Katholieke Universiteit Leuven

Publications -  117
Citations -  2052

Marcus S. Dahlem is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Silicon photonics & Photonics. The author has an hindex of 21, co-authored 110 publications receiving 1780 citations. Previous affiliations of Marcus S. Dahlem include GlobalFoundries & Khalifa University.

Papers
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Journal ArticleDOI

Photonic ADC: overcoming the bottleneck of electronic jitter.

TL;DR: This work demonstrates that the photonic approach can deliver on its promise by digitizing a 41 GHz signal with 7.0 effective bits using a photonic ADC built from discrete components, a 4-5 times improvement over the performance of the best electronic ADCs which exist today.
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Achieving centimetre-scale supercollimation in a large-area two-dimensional photonic crystal.

TL;DR: Through quantitative studies of the beam evolution in a two-dimensional PhC, it is found thatsupercollimation possesses unexpected but inherent robustness with respect to short-scale disorder such as fabrication roughness, enabling supercollimation over 600 isotropic diffraction-lengths.
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Reconfigurable multi-channel second-order silicon microring-resonator filterbanks for on-chip WDM systems

TL;DR: This filterbank is suitable for on-chip wavelength-division-multiplexing (WDM) applications, and has the largest-to-date reported number of channels built on an SOI platform.
Proceedings ArticleDOI

Maximizing the Thermo-Optic Tuning Range of Silicon Photonic Structures

TL;DR: In this paper, the authors demonstrate 20 nm thermo-optic tuning in silicon microring resonators with 16 nm free spectral range (FSR), the largest reported full-FSR thermal tuning, with a tuning efficiency of 28 muW/GHz.
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Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe Microscopy

TL;DR: It is shown how to probe the charge carrier density of zinc oxide thin films by Scanning Kelvin Probe Microscopy, a technique that allows measuring the contact potential difference between the tip and the sample surface with high spatial resolution and results inferred are in accordance with carrier concentration expected.