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Mark E. Twigg

Researcher at United States Naval Research Laboratory

Publications -  190
Citations -  3684

Mark E. Twigg is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Molecular beam epitaxy & Dislocation. The author has an hindex of 33, co-authored 188 publications receiving 3485 citations. Previous affiliations of Mark E. Twigg include Brown University & United States Department of the Navy.

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A fluorescence resonance energy transfer-derived structure of a quantum dot-protein bioconjugate nanoassembly

TL;DR: This is the first structural model of a hybrid luminescent QD-protein receptor assembly elucidated by using spectroscopic measurements in conjunction with crystallographic and other data and indicates that MBP has a preferred orientation on the QD surface.
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Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

TL;DR: In this paper, the same GaN growth conditions were used initially, resulting in films with approximately the same dislocation density, after which a single growth parameter was varied and the impurity concentrations measured using SIMS.
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GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

TL;DR: In this article, GaN decomposition, Ga desorption, and Ga droplet accumulation, were obtained from weight measurements before and after annealing the GaN films in a close-spaced showerhead reactor.
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Thiol-Terminated Di-, Tri-, and Tetraethylene Oxide Functionalized Gold Nanoparticles: A Water-Soluble, Charge-Neutral Cluster

TL;DR: A series of gold nanoclusters stabilized by ligands containing short ethylene oxide oligomers of fixed length were prepared and characterized in this article, where the thiols CH3(OCH2CH2)nSH (where n = 2, 3, and 4) were substituted onto the surface of 1.8-nm hexanethiol-capped gold clusters by a thiol exchange reaction, and the resulting nanclusters were characterized by NMR, FTIR, and UV/vis spectroscopies; TGA; and TEM analysis.
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Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides

TL;DR: In this paper, the authors investigated the relaxation of compressively strained heteroepitaxial Si07Ge03 films bonded to high and low viscosity glass compliant layers.