James C. Culbertson

TL;DR: The results indicate single-side fluorination provides the necessary electronic and optical changes to be practical for graphene device applications.

TL;DR: In this article, GaN decomposition, Ga desorption, and Ga droplet accumulation, were obtained from weight measurements before and after annealing the GaN films in a close-spaced showerhead reactor.

TL;DR: The dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO(2), GaN and Al(2)O(3) substrates using a thermal release tape is demonstrated to enable EG films amenable for use in device fabrication on arbitrary substrates and films that are deemed most beneficial to carrier transport.

TL;DR: In this paper, the authors measured the Hall effect mobilities and sheet carrier densities of epitaxial graphene films at 300 K and 77 K and the data depended on the growth face.

TL;DR: In this paper, the first observation of linear magnetoresistance (LMR) in multilayer epitaxial graphene grown on SiC was reported and attributed to inhomogeneities in the epitaxially grown graphene film.