Showing papers by "Mark S. Hybertsen published in 2020"

A Physical Model for Understanding the Activation of MoS2 Basal-Plane Sulfur Atoms for the Hydrogen Evolution Reaction

Abstract: Weak binding of hydrogen atoms to the 2H-MoS2 basal plane renders MoS2 inert as an electrocatalyst for the hydrogen evolution reaction. Transition-metal doping can activate neighboring sulfur atoms in the MoS2 basal plane to bind hydrogen more strongly. Our theoretical studies show strong variation in the degree of activation by dopants across the 3d transition-metal series. To understand the trends in activation, we propose a model based on the electronic promotion energy required to partially open the full valence shell of a local S atom and therefore enable it to bond with a H atom. In general, the promotion is achieved through an electron transfer from the S to neighboring metal-atom sites. Furthermore, we demonstrate a specific, electronic-structure-based descriptor for the hydrogen-binding strength: Δdp , the local interband energy separation between the lowest empty d-states on the dopant metal atoms and occupied p-states on S. This model can be used to provide guidelines for chalcogen activation in future catalyst design based on doped transition-metal dichalcogenides.

Microscopic Relaxation Channels in Materials for Superconducting Qubits

Abstract: Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform measurements of transmon qubit relaxation times $T_1$ in parallel with spectroscopy and microscopy of the thin polycrystalline niobium films used in qubit fabrication. By comparing results for films deposited using three techniques, we reveal correlations between $T_1$ and grain size, enhanced oxygen diffusion along grain boundaries, and the concentration of suboxides near the surface. Physical mechanisms connect these microscopic properties to residual surface resistance and $T_1$ through losses arising from the grain boundaries and from defects in the suboxides. Further, experiments show that the residual resistance ratio can be used as a figure of merit for qubit lifetime. This comprehensive approach to understanding qubit decoherence charts a pathway for materials-driven improvements of superconducting qubit performance.