M
Mark S. Hybertsen
Researcher at Center for Functional Nanomaterials
Publications - 265
Citations - 28904
Mark S. Hybertsen is an academic researcher from Center for Functional Nanomaterials. The author has contributed to research in topics: Quasiparticle & Conductance. The author has an hindex of 75, co-authored 260 publications receiving 26170 citations. Previous affiliations of Mark S. Hybertsen include Brookhaven College & St. John's University.
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Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies.
TL;DR: In this article, a first-principles theory of the quasiparticle energies in semiconductors and insulators described in terms of the electron self-energy operator is presented.
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Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS 2
Alexey Chernikov,Timothy C. Berkelbach,Heather M. Hill,Albert F. Rigosi,Yilei Li,Ozgur Burak Aslan,David R. Reichman,Mark S. Hybertsen,Tony F. Heinz +8 more
TL;DR: Strong but unconventional electron-hole interactions are expected to be ubiquitous in atomically thin materials using a microscopic theory in which the nonlocal nature of the effective dielectric screening modifies the functional form of the Coulomb interaction.
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Dependence of single-molecule junction conductance on molecular conformation
Latha Venkataraman,Jennifer E. Klare,Colin Nuckolls,Mark S. Hybertsen,Michael L. Steigerwald +4 more
TL;DR: Amine link groups are used to form single-molecule junctions with more reproducible current–voltage characteristics and it is found that the conductance for the series decreases with increasing twist angle, consistent with a cosine-squared relation predicted for transport through π-conjugated biphenyl systems.
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First-principles theory of quasiparticles: Calculation of band gaps in semiconductors and insulators.
TL;DR: In this article, a first-principles theory for the quasiparticle energies of semiconductors and insulators is presented, and the full dielectric matrix is used to evaluate the nonlocal, energy-dependent electron self-energy operator.
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Graphene Oxidation: Thickness-Dependent Etching and Strong Chemical Doping
Li Liu,Sunmin Ryu,Michelle R. Tomasik,Elena Stolyarova,Naeyoung Jung,Mark S. Hybertsen,Michael L. Steigerwald,Louis E. Brus,George W. Flynn +8 more
TL;DR: It is found that O 2 etching kinetics vary strongly with the number of graphene layers in the sample, and three-layer-thick samples show etching similar to bulk natural graphite.