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Albert F. Rigosi
Researcher at National Institute of Standards and Technology
Publications - 120
Citations - 6961
Albert F. Rigosi is an academic researcher from National Institute of Standards and Technology. The author has contributed to research in topics: Graphene & Quantum Hall effect. The author has an hindex of 22, co-authored 80 publications receiving 5272 citations. Previous affiliations of Albert F. Rigosi include SLAC National Accelerator Laboratory & Stanford University.
Papers
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Journal ArticleDOI
Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS 2
Alexey Chernikov,Timothy C. Berkelbach,Heather M. Hill,Albert F. Rigosi,Yilei Li,Ozgur Burak Aslan,David R. Reichman,Mark S. Hybertsen,Tony F. Heinz +8 more
TL;DR: Strong but unconventional electron-hole interactions are expected to be ubiquitous in atomically thin materials using a microscopic theory in which the nonlocal nature of the effective dielectric screening modifies the functional form of the Coulomb interaction.
Journal ArticleDOI
Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS 2 , Mo S e 2 , WS 2 , and WS e 2
Yilei Li,Alexey Chernikov,Xian Zhang,Albert F. Rigosi,Heather M. Hill,Arend M. van der Zande,Daniel Chenet,En Min Shih,James Hone,Tony F. Heinz +9 more
TL;DR: In this paper, the complex in-plane dielectric function from 1.5 to 3 eV for monolayers of four transition metal dichalcogenides (MoSe 2, WSe2, MoS2, and WS2) was presented.
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Coulomb engineering of the bandgap and excitons in two-dimensional materials
Archana Raja,Andrey Chaves,Andrey Chaves,Jaeeun Yu,Ghidewon Arefe,Heather M. Hill,Heather M. Hill,Albert F. Rigosi,Albert F. Rigosi,Timothy C. Berkelbach,Philipp Nagler,Christian Schüller,Tobias Korn,Colin Nuckolls,James Hone,Louis E. Brus,Tony F. Heinz,Tony F. Heinz,Tony F. Heinz,David R. Reichman,Alexey Chernikov,Alexey Chernikov +21 more
TL;DR: By engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS2 and WSe2 by hundreds of meV, as an initial step towards the creation of diverse lateral junctions with nanoscale resolution.
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Valley splitting and polarization by the Zeeman effect in monolayer MoSe2.
Yilei Li,Jonathan Ludwig,Tony Low,Alexey Chernikov,Xu Cui,Ghidewon Arefe,Young Duck Kim,Arend M. van der Zande,Albert F. Rigosi,Heather M. Hill,Suk Hyun Kim,James Hone,Zhiqiang Li,Dmitry Smirnov,Tony F. Heinz +14 more
TL;DR: This work has measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T and the magnitude of the Zeeman shift agrees with predicted magnetic moments for carriers in the conduction and valence bands.
Journal ArticleDOI
Population inversion and giant bandgap renormalization in atomically thin WS2 layers
Alexey Chernikov,Claudia Ruppert,Heather M. Hill,Albert F. Rigosi,Tony F. Heinz,Tony F. Heinz,Tony F. Heinz +6 more
TL;DR: In this paper, atomically thin layers of transition metal dichalcogenides exhibit a disappearance of strong excitonic absorption along with population inversion at the direct gap over a spectral range of hundreds of meV after pulsed photoexcitation.