Showing papers by "Mark W. Knight published in 2013"
TL;DR: A grating-based hot electron device with significantly larger photocurrent responsivity than previously reported antenna-based geometries is reported, and the grating geometry enables more than three times narrower spectral response than observed for nanoantenna-based devices.
Abstract: In gratings, incident light can couple strongly to plasmons propagating through periodically spaced slits in a metal film, resulting in a strong, resonant absorption whose frequency is determined by the nanostructure periodicity. When a grating is patterned on a silicon substrate, the absorption response can be combined with plasmon-induced hot electron photocurrent generation. This yields a photodetector with a strongly resonant, narrowband photocurrent response in the infrared, limited at low frequencies by the Schottky barrier, not the bandgap of silicon. Here we report a grating-based hot electron device with significantly larger photocurrent responsivity than previously reported antenna-based geometries. The grating geometry also enables more than three times narrower spectral response than observed for nanoantenna-based devices. This approach opens up the possibility of plasmonic sensors with direct electrical readout, such as an on-chip surface plasmon resonance detector driven at a single wavelength.
570 citations
TL;DR: It is shown that embedding plasmonic structures into the semiconductor substantially increases hot electron emission, and Responsivities increase by 25× over planar diodes for embedding depths as small as 5 nm.
Abstract: When plasmonic nanostructures serve as the metallic counterpart of a metal–semiconductor Schottky interface, hot electrons due to plasmon decay are emitted across the Schottky barrier, generating measurable photocurrents in the semiconductor. When the plasmonic nanostructure is atop the semiconductor, only a small percentage of hot electrons are excited with a wavevector permitting transport across the Schottky barrier. Here we show that embedding plasmonic structures into the semiconductor substantially increases hot electron emission. Responsivities increase by 25× over planar diodes for embedding depths as small as 5 nm. The vertical Schottky barriers created by this geometry make the plasmon-induced hot electron process the dominant contributor to photocurrent in plasmonic nanostructure-diode-based devices.
306 citations
TL;DR: In this paper, a method for assembling noble metal nanoparticles into stable, three-dimensional (3-D) clusters, whose optical properties can be highly sensitive or remarkably independent of cluster orientation, depending on particle number and cluster geometry.
Abstract: Assembling nanoparticles into well-defined structures is an important way to create and tailor the optical properties of materials. Most advances in metamaterials research to date have been based on structures fabricated in two-dimensional planar geometries. Here, we show an efficient method for assembling noble metal nanoparticles into stable, three-dimensional (3-D) clusters, whose optical properties can be highly sensitive or remarkably independent of cluster orientation, depending on particle number and cluster geometry. Some of the clusters, such as tetrahedra and icosahedra, could serve as the optical kernels for metafluids, imparting metamaterial optical properties into disordered media such as liquids, glasses, or plastics, free from the requirement of nanostructure orientation.
161 citations
TL;DR: It is shown that, for a nanogap located within a nanowire linking extended Au electrodes, the greatest enhancement and resulting SERS emission occurs when the electric field of the incident light is polarized along the gap (transverse to the interelectrode axis).
Abstract: Nanoscale gaps between adjacent metallic nanostructures give rise to extraordinarily large field enhancements, known as "hot spots", upon illumination. Incident light with the electric field polarized across the gap (along the interparticle axis) is generally known to induce the strongest surface enhanced Raman spectroscopy (SERS) enhancements. However, here we show that for a nanogap located within a nanowire linking extended Au electrodes, the greatest enhancement and resulting SERS emission occurs when the electric field of the incident light is polarized along the gap (transverse to the interelectrode axis). This surprising and counterintuitive polarization dependence results from a strong dipolar plasmon mode that resonates transversely across the nanowire, coupling with dark multipolar modes arising from subtle intrinsic asymmetries in the nanogap. These modes give rise to highly reproducible SERS enhancements at least an order of magnitude larger than the longitudinal modes in these structures.
96 citations
TL;DR: In this article, it was shown that for a nanogap located within a nanowire linking extended Au electrodes, the greatest enhancement and resulting SERS emission occurs when the electric field of the incident light is polarized along the gap (transverse to the interelectrode axis).
Abstract: Nanoscale gaps between adjacent metallic nanostructures give rise to extraordinarily large field enhancements, known as “hot spots”, upon illumination. Incident light with the electric field polarized across the gap (along the interparticle axis) is generally known to induce the strongest surface enhanced Raman spectroscopy (SERS) enhancements. However, here we show that, for a nanogap located within a nanowire linking extended Au electrodes, the greatest enhancement and resulting SERS emission occurs when the electric field of the incident light is polarized along the gap (transverse to the interelectrode axis). This surprising and counterintuitive polarization dependence results from a strong dipolar plasmon mode that resonates transversely across the nanowire, coupling with dark multipolar modes arising from subtle intrinsic asymmetries in the nanogap. These modes give rise to highly reproducible SERS enhancements at least an order of magnitude larger than the longitudinal modes in these structures.
85 citations
TL;DR: It is shown that a hemispherical nanoantenna with its symmetry axis tilted out of the plane accomplishes this task with far greater efficacy.
Abstract: The light scattering properties of hemispherical resonant nanoantennas can be used to redirect normal incidence light to propagate within a thin film or thin film-based device, such as a solar cell, for enhanced efficiency. While planar nanoantennas are typically fabricated as simple nanoparticles or nanostructures in the film plane, here we show that a hemispherical nanoantenna with its symmetry axis tilted out of the plane accomplishes this task with far greater efficacy. The amount of light scattered into an underlying dielectric by the electric and magnetic dipole response of oriented nanocups can be more than three times that achieved using symmetric antenna structures.
32 citations
Journal Article•
TL;DR: This approach allows us to image the local density of optical states (LDOS) of Al nanorod antennas with a spatial resolution less than 20 nm and to identify the radiative modes of these nanostructures across the visible and into the UV spectral range.
Abstract: The use of aluminum for plasmonic nanostructures opens up new possibilities, such as access to short-wavelength regions of the spectrum, complementary metal-oxide-semiconductor (CMOS) compatibility, and the possibility of low-cost, sustainable, mass-producible plasmonic materials. Here we examine the properties of individual Al nanorod antennas with cathodoluminescence (CL). This approach allows us to image the local density of optical states (LDOS) of Al nanorod antennas with a spatial resolution less than 20 nm and to identify the radiative modes of these nanostructures across the visible and into the UV spectral range. The results, which agree well with finite difference time domain (FDTD) simulations, lay the groundwork for precise Al plasmonic nanostructure design for a variety of applications.
29 citations