抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

http://chialvo.org/Curso/UBACurso/DIA7/Papers/Aono_NatMat_07_Ionic%20Switching%20Memory.pdf

Nanoionics-based resistive switching memories

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met.

Memristive devices for computing

This paper gives the 2010 self-consistent set of values of the basic constants and conversion factors of physics and chemistry recommended by the Committee on Data for Science and Technology (CODATA) for international use. The 2010 adjustment takes into account the data considered in the 2006 adjustment as well as the data that became available from 1 January 2007, after the closing date of that adjustment, until 31 December 2010, the closing date of the new adjustment. Further, it describes in detail the adjustment of the values of the constants, including the selection of the final set of input data based on the results of least-squares analyses. The 2010 set replaces the previously recommended 2006 CODATA set and may also be found on the World Wide Web at physics.nist.gov/constants.

/pdf/codata-recommended-values-of-the-fundamental-physical-4bsdant71c.pdf

CODATA Recommended Values of the Fundamental Physical Constants: 2006

Recently, the installation of the components for the free electron laser SwissFEL has started at the Paul Scherrer Institute (PSI). In March 2016, beginning of the injector commissioning is planned and first lasing is foreseen a year later. New hardware, like VME64x-boards (IFC 1210, an P2020 based intelligent FPGA controller from IOxOS) and -crates (Trenew), timing system (from MRF with advanced features), motion controllers (Power PMAC from Delta Tau, and MDrive from Schneider), among others, as well as modern field buses, pose great challenges to the controls team. The close interaction of machineand experiment-components require advanced software concepts for data-acquisition, -distribution, and archiving. An overview of the project will be presented and the different HW and SW solutions based on the experience gained from preliminary implementations at other facilities of PSI will be explained. First results of the HW commissioning at the SwissFEL will be reported.

Markus Janousch

Papers

Overview and Status of the SwissFEL Project at PSI

Measurement of the strong interaction shift and width of the 1S state in pionic hydrogen

Measurement of the transverse polarization of positrons from the decay of polarized muons: A status report