抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

http://chialvo.org/Curso/UBACurso/DIA7/Papers/Aono_NatMat_07_Ionic%20Switching%20Memory.pdf

Nanoionics-based resistive switching memories

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met.

Memristive devices for computing

This paper gives the 2010 self-consistent set of values of the basic constants and conversion factors of physics and chemistry recommended by the Committee on Data for Science and Technology (CODATA) for international use. The 2010 adjustment takes into account the data considered in the 2006 adjustment as well as the data that became available from 1 January 2007, after the closing date of that adjustment, until 31 December 2010, the closing date of the new adjustment. Further, it describes in detail the adjustment of the values of the constants, including the selection of the final set of input data based on the results of least-squares analyses. The 2010 set replaces the previously recommended 2006 CODATA set and may also be found on the World Wide Web at physics.nist.gov/constants.

/pdf/codata-recommended-values-of-the-fundamental-physical-4bsdant71c.pdf

CODATA Recommended Values of the Fundamental Physical Constants: 2006

X-ray near edge absorption spectroscopy was used to probe the electronic structure of multiferroic orthorhombic LuMnO3 polycrystalline samples and strained, twin-free orthorhombic (1–10) LuMnO3 films grown by pulsed laser deposition on (1–10) YAlO3 substrates. For all o-LuMnO3 samples x-ray near edge absorption spectroscopy spectra reveal that the pre-edge structure is influenced by the increase in MnO6 distortion as a result of the smaller Re-ion or film strain. Furthermore there is clear evidence of anisotropic Mn-O bonding and Mn orbital ordering along the c- and [110] direction. The experimental film and bulk data are in agreement with ab initio simulations.

/pdf/experimental-and-ab-initio-investigations-of-the-x-ray-2pfnzmaf5d.pdf

Experimental and ab initio investigations of the x-ray absorption near edge structure of orthorhombic LuMnO3

The most precise upper limits for the muonneutrino mass m vμ have been obtained by measuring the muon momentum p μ+ in pion decay π + →μ + ν μ at rest. The current result for the squared neutrino mass, m νμ 2 = -0.154 ± 0.045 MeV 2 , negative by 3.4 standard deviations, indicates that the experimental value for at least one of the three quantities used in the (m νμ 2 )- derivation (p μ +, m π+ , m μ +) is wrong.

Measurements of the muon-neutrino mass

SwissFEL is a new free electron laser facility at the Paul Scherrer Institute (PSI) in Switzerland. Commissioning started in 2016 and resulted in first lasing in December 2016 (albeit not on the design energy). In 2017, the commissioning continued and will result in the first pilot experiments at the end of the year. The close interaction of experiment and accelerator components as well as the pulsed electron beam required a well thought out integration of the control system including some new concepts and layouts. This paper presents the current status of the control system together with some lessons learned.

SwissFEL Control System - Overview, Status, and Lessons Learned

The conceptual designs for the insertion device front ends [1] have been completed for the 2.4 GeV swiss light source (SLS), currently under construction at the Paul Scherrer Institute. The critical component of the front ends, the photon shutter, has been designed to be capable of absorbing the full intensity of the photon beams from the insertion devices [2] . In this contribution, the detailed shutter design will be discussed. The thermal and structural analysis results obtained from a finite element calculation for the Material Science Beamline 4S [3] , which produces the highest power load at the shutter (4 kW, 95 W/mm 2 ) of all the SLS beamlines, will be presented. A test using an electron beam welding machine to simulate the photon beam source will be described. The experimental results are compared with those from finite element calculations, and they confirm that the designed shutter can be safely operated in the front end of beamline 4S.

Markus Janousch

Papers

Experimental and ab initio investigations of the x-ray absorption near edge structure of orthorhombic LuMnO3

Measurements of the muon-neutrino mass

SwissFEL Control System - Overview, Status, and Lessons Learned

A photon shutter for insertion device front ends at the SLS

Phosphorus speciation of sewage sludge ashes and potential for fertilizer production