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Martin Nikl

Researcher at Academy of Sciences of the Czech Republic

Publications -  890
Citations -  22558

Martin Nikl is an academic researcher from Academy of Sciences of the Czech Republic. The author has contributed to research in topics: Luminescence & Scintillation. The author has an hindex of 61, co-authored 845 publications receiving 19590 citations. Previous affiliations of Martin Nikl include University of Milan & Claude Bernard University Lyon 1.

Papers
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Energy transfer processes in CeF3 single crystals

TL;DR: In this article, the temperature dependences of regular and disturbed Ce3+ site emission and decay kinetics were investigated in temperature range 4.2 -300 K with the aim to determine the nature of the energy transfer mechanism in CeF3.
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Further results on GdAlO3:Ce scintillator

TL;DR: In this paper, spectroscopic properties of Ce3+ ions in GdAlO3 crystal are presented, and at least three nonequivalent centres (multisites) are present in this crystal.
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Luminescence and relaxed excited state origin in CsI:Pb crystals

TL;DR: In this article, the origin of the excited states responsible for the optical characteristics of CsI:Pb has been discussed and it has been concluded that the doublet ≈3.70 eV absorption (excitation) band is caused by the electronic transitions into the Pb 2+ triplet state split due to the presence of a cation vacancy near a Pb2+ ion, while the higher energy bands are of the charge-transfer origin.
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Time-resolved photoluminescence and excited state structure of Bi3+ center in YAlO3

TL;DR: In this article, an intense dominant ultraviolet luminescence of YAlO 3 :Bi is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state (RES) of Bi3 + centers related to the 3 P 0, 3 P 1 levels of a free Bi 3+ ion, respectively.
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Gamma spectroscopy and optoelectronic imaging with hybrid photon detector

TL;DR: Hybrid Photon Detectors (HPDs) detect light via photocathodes and accelerate the emitted photoelectrons by an electric field towards silicon PIN-anodes, where they are absorbed and generate electronic signals as mentioned in this paper.