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Martin Nikl

Researcher at Academy of Sciences of the Czech Republic

Publications -  890
Citations -  22558

Martin Nikl is an academic researcher from Academy of Sciences of the Czech Republic. The author has contributed to research in topics: Luminescence & Scintillation. The author has an hindex of 61, co-authored 845 publications receiving 19590 citations. Previous affiliations of Martin Nikl include University of Milan & Claude Bernard University Lyon 1.

Papers
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Development of Novel UV Emitting Single Crystalline Film Scintillators

TL;DR: In this paper, the development of new types of UV-emitting scintillators based on single crystalline films (SCF) of aluminum perovskites and garnets grown by the liquid phase epitaxy method is dedicated to the development.
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Color centers in LiCaAlF6 single crystals and their suppression by doping

TL;DR: In this article, LiCaAlF6 (LiCAF) single crystals pure and doped with MgF2 and BaF2 were successfully grown by the Czochralski technique and optical absorption measurements in the UV/Visible spectral regions following x-ray irradiation were performed in order to investigate the radiation damage of the crystals.
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Preparation, luminescence and structural properties of rare-earth-doped RbLuS2 compounds

TL;DR: In this paper, a charge transfer transition in the Pr3+ excitation spectrum in the near UV spectral region is revealed and an efficient energy transfer from the host to the emission centers is found.
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Rare-Earth Doped Sol-Gel Silicate Glasses for Scintillator Applications

TL;DR: In this article, radio-, photo-and thermally stimulated-luminescence (RL, PL, TSL) measurements have been performed on SiO2 sol-gel glasses doped by 0.1 mol% Ce and 3 mol% Gd.
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Time-resolved spectroscopy of exciton states in single crystals and single crystalline films of YAlO3 and YAlO3 : Ce

TL;DR: In this article, the origin and structure of the intrinsic and impurity defects responsible for various exciton-related emission and excitation bands are identified and the formation energies of various -related defects are calculated within the density functional theory.