Optics offers unique opportunities for reducing energy in information processing and communications while simultaneously resolving the problem of interconnect bandwidth density inside machines. Such energy dissipation overall is now at environmentally significant levels; the source of that dissipation is progressively shifting from logic operations to interconnect energies. Without the prospect of substantial reduction in energy per bit communicated, we cannot continue the exponential growth of our use of information. The physics of optics and optoelectronics fundamentally addresses both interconnect energy and bandwidth density, and optics may be the only scalable solution to such problems. Here we summarize the corresponding background, status, opportunities, and research directions for optoelectronic technology and novel optics, including subfemtojoule devices in waveguide and novel two-dimensional (2-D) array optical systems. We compare different approaches to low-energy optoelectronic output devices and their scaling, including lasers, modulators and LEDs, optical confinement approaches (such as resonators) to enhance effects, and the benefits of different material choices, including 2-D materials and other quantum-confined structures. With such optoelectronic energy reductions, and the elimination of line charging dissipation by the use optical connections, the next major interconnect dissipations are in the electronic circuits for receiver amplifiers, timing recovery, and multiplexing. We show we can address these through the integration of photodetectors to reduce or eliminate receiver circuit energies, free-space optics to eliminate the need for timing and multiplexing circuits (while also solving bandwidth density problems), and using optics generally to save power by running large synchronous systems. One target concept is interconnects from ∼1 cm to ∼10 m that have the same energy (∼10 fJ/bit) and simplicity as local electrical wires on chip.

Attojoule Optoelectronics for Low-Energy Information Processing and Communications

Optics offers unique opportunities for reducing energy in information processing and communications while resolving the problem of interconnect bandwidth density inside machines. Such energy dissipation overall is now at environmentally significant levels; the source of that dissipation is progressively shifting from logic operations to interconnect energies. Without the prospect of substantial reduction in energy per bit communicated, we cannot continue the exponential growth of our use of information. The physics of optics and optoelectronics fundamentally addresses both interconnect energy and bandwidth density, and optics may be the only scalable solution to such problems. Here we summarize the corresponding background, status, opportunities, and research directions for optoelectronic technology and novel optics, including sub-femtojoule devices in waveguide and novel 2D array optical systems. We compare different approaches to low-energy optoelectronic output devices and their scaling, including lasers, modulators and LEDs, optical confinement approaches (such as resonators) to enhance effects, and the benefits of different material choices, including 2D materials and other quantum-confined structures. Beyond the elimination of line charging by the use optical connections, the next major interconnect dissipations are in the electronic circuits for receiver amplifiers, timing recovery and multiplexing. We can address these through the integration of photodetectors to reduce or eliminate receiver circuit energies, free-space optics to eliminate the need for timing and multiplexing circuits (while solving bandwidth density problems), and using optics generally to save power by running large synchronous systems. One target concept is interconnects from ~ 1 cm to ~ 10 m that have the same energy (~ 10fJ/bit) and simplicity as local electrical wires on chip.

Attojoule Optoelectronics for Low-Energy Information Processing and Communications: a Tutorial Review

Optical Whispering Gallery Modes (WGMs) derive their name from a famous acoustic phenomenon of guiding a wave by a curved boundary observed nearly a century ago. This phenomenon has a rather general nature, equally applicable to sound and all other waves. It enables resonators of unique properties attractive both in science and engineering. Very high quality factors of optical WGM resonators persisting in a wide wavelength range spanning from radio frequencies to ultraviolet light, their small mode volume, and tunable in- and out- coupling make them exceptionally efficient for nonlinear optical applications. Nonlinear optics facilitates interaction of photons with each other and with other physical systems, and is of prime importance in quantum optics. In this paper we review numerous applications of WGM resonators in nonlinear and quantum optics. We outline the current areas of interest, summarize progress, highlight difficulties, and discuss possible future development trends in these areas.

https://iopscience.iop.org/article/10.1088/2040-8978/18/12/123002/pdf

Nonlinear and quantum optics with whispering gallery resonators

Electro-optic modulators (EOMs) convert signals from the electrical to the optical domain. They are at the heart of optical communication, microwave signal processing, sensing, and quantum technologies. Next-generation EOMs require high-density integration, low cost, and high performance simultaneously, which are difficult to achieve with established integrated photonics platforms. Thin-film lithium niobate (LN) has recently emerged as a strong contender owing to its high intrinsic electro-optic (EO) efficiency, industry-proven performance, robustness, and, importantly, the rapid development of scalable fabrication techniques. The thin-film LN platform inherits nearly all the material advantages from the legacy bulk LN devices and amplifies them with a smaller footprint, wider bandwidths, and lower power consumption. Since the first adoption of commercial thin-film LN wafers only a few years ago, the overall performance of thin-film LN modulators is already comparable with, if not exceeding, the performance of the best alternatives based on mature platforms such as silicon and indium phosphide, which have benefited from many decades of research and development. In this mini-review, we explain the principles and technical advances that have enabled state-of-the-art LN modulator demonstrations. We discuss several approaches, their advantages and challenges. We also outline the paths to follow if LN modulators are to improve further, and we provide a perspective on what we believe their performance could become in the future. Finally, as the integrated LN modulator is a key subcomponent of more complex photonic functionalities, we look forward to exciting opportunities for larger-scale LN EO circuits beyond single components.

Integrated lithium niobate electro-optic modulators: when performance meets scalability

Chip-scale integration of electronics and photonics is recognized as important to the future of information technology, as is the exploitation of the best properties of electronics, photonics, and plasmonics to achieve this objective. However, significant challenges exist including matching the sizes of electronic and photonic circuits; achieving low-loss transition between electronics, photonics, and plasmonics; and developing and integrating new materials. This review focuses on a hybrid material approach illustrating the importance of both chemical and engineering concepts. Silicon–organic hybrid (SOH) and plasmonic–organic hybrid (POH) technologies have permitted dramatic improvements in electro-optic (EO) performance relevant to both digital and analog signal processing. For example, the voltage–length product of devices has been reduced to less than 40 Vμm, facilitating device footprints of <20 μm2 operating with digital voltage levels to frequencies above 170 GHz. Energy efficiency has been improve...

Silicon–Organic and Plasmonic–Organic Hybrid Photonics

To reduce the ever-increasing energy consumption in datacenters, one of the effective approaches is to increase the ambient temperature, thus lowering the energy consumed in the cooling systems. However, this entails more stringent requirements for the reliability and durability of the optoelectronic components. Herein, we fabricate and demonstrate silicon-polymer hybrid modulators which support ultra-fast single-lane data rates up to 200 gigabits per second, and meanwhile feature excellent reliability with an exceptional signal fidelity retained at extremely-high ambient temperatures up to 110 °C and even after long-term exposure to high temperatures. This is achieved by taking advantage of the high electro-optic (EO) activities (in-device n3r33 = 1021 pm V−1), low dielectric constant, low propagation loss (α, 0.22 dB mm−1), and ultra-high glass transition temperature (Tg, 172 °C) of the developed side-chain EO polymers. The presented modulator simultaneously fulfils the requirements of bandwidth, EO efficiency, and thermal stability for EO modulators. It could provide ultra-fast and reliable interconnects for energy-hungry and harsh-environment applications such as datacentres, 5G/B5G, autonomous driving, and aviation systems, effectively addressing the energy consumption issue for the next-generation optical communication. Information and communication datacentres require a large amount of energy for their cooling systems, which could be decreased by working at higher temperatures. Here, the authors introduce a silicon-polymer hybrid modulator that maintains high data rates for long periods at high temperatures that could be used under such conditions, to reduce energy consumption.

/pdf/high-temperature-resistant-silicon-polymer-hybrid-modulator-cerdi2mrje.pdf

High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s-1 for energy-efficient datacentres and harsh-environment applications.

An electro-optic (EO) modulator using a TiO2 slot hybrid waveguide has been designed and fabricated. Optical mode calculations revealed that the mode was primarily confined within the slots when using a double-slot configuration, thus achieving a high EO activity experimentally. The TiO2 slots also acted as an important barrier to induce an enhanced DC field during the poling of the EO polymer and the driving of the EO modulator. The hybrid phase modulator exhibited a driving voltage (Vπ) of 1.6 V at 1550 nm, which can be further reduced to 0.8 V in a 1 cm-long push-pull Mach–Zehnder interferometer (MZI) structure. The modulator demonstrated a low propagation loss of 5 dB/cm and a relatively high end-fire coupling efficiency.

/pdf/a-hybrid-electro-optic-polymer-and-tio2-double-slot-2fsn338w7n.pdf

A hybrid electro-optic polymer and TiO2 double-slot waveguide modulator.

Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

In this work, we have demonstrated a hybrid silicon/polymer ring resonator electro-optic (EO) modulator with a temperature-independent modulation. The waveguide consisted of an ultrathin silicon core with an EO polymer cladding. Using ultrathin silicon is advantageous, as it allows a reduction in the side-wall scattering loss and also offers excellent light distribution to enable athermal operation. With a radius of 60 μm, the ring exhibited a 9.7 dB extinction depth and a Q value of 1.25 × 104. After poling of the EO polymer, the ring resonator functioned well as an EO modulator and operated in a stable manner between 25 and 55 °C.

Athermal Hybrid Silicon/Polymer Ring Resonator Electro-optic Modulator

In this work, an electro-optic (EO) ring resonator modulator was designed and fabricated in a waveguide consisting of a titanium dioxide (TiO2) core, silicon dioxide (SiO2) buffer layer, EO polymer claddings, and electrodes. By optimizing the thickness of the TiO2 and SiO2 layers, the modulator could satisfy the single-mode requirement; furthermore 52.5% TM mode was confined in the active EO polymer layers. The designed modulator could also pole the EO polymer effectively regardless of its resistivity. Therefore, the EO modulator was observed to show a high resonance wavelength shift of 2.25 × 10−2 nm/V. The intensity modulation at 1550 nm showed a Vp-p = 1.9 V for a 3dB distinction ratio.

Masa Aki Ozawa

Papers

High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s-1 for energy-efficient datacentres and harsh-environment applications.

A hybrid electro-optic polymer and TiO2 double-slot waveguide modulator.

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

Athermal Hybrid Silicon/Polymer Ring Resonator Electro-optic Modulator

TiO2 ring-resonator-based EO polymer modulator