We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

Modern nanotechnology allows one to scale down various important devices (sensors, chips, fibers, etc.) and thus opens up new horizons for their applications. The efficiency of most of them is based on fundamental physical phenomena, such as transport of wave excitations and resonances. Short propagation distances make phase-coherent processes of waves important. Often the scattering of waves involves propagation along different paths and, as a consequence, results in interference phenomena, where constructive interference corresponds to resonant enhancement and destructive interference to resonant suppression of the transmission. Recently, a variety of experimental and theoretical work has revealed such patterns in different physical settings. The purpose of this review is to relate resonant scattering to Fano resonances, known from atomic physics. One of the main features of the Fano resonance is its asymmetric line profile. The asymmetry originates from a close coexistence of resonant transmission and resonant reflection and can be reduced to the interaction of a discrete (localized) state with a continuum of propagation modes. The basic concepts of Fano resonances are introduced, their geometrical and/or dynamical origin are explained, and theoretical and experimental studies of light propagation in photonic devices, charge transport through quantum dots, plasmon scattering in Josephson-junction networks, and matter-wave scattering in ultracold atom systems, among others are reviewed.

/pdf/fano-resonances-in-nanoscale-structures-2c8qeas3bm.pdf

Fano resonances in nanoscale structures

Matrix Factorization Techniques for Recommender Systems

Lectins on cell surfaces mediate cell-cell interactions by combining with complementary carbohydrates on apposing cells. They play a key role in the control of various normal and pathological processes in living organisms.

http://science.sciencemag.org/content/sci/246/4927/227.full.pdf

Lectins as cell recognition molecules

Scattered Data Approximation

PURPOSE:To equalize the size of droplets and the speed of flying when the same heat energy is applied at all times on continuous recording by thermally expanding air in a pressure chamber, parting ink in an ink nozzle by the air, flying the ink parted as ink droplets form the nose of the nozzle by utilizing working force generated at the time. CONSTITUTION:Ink (i) is arranged into a nozzle, air (d) is sealed into a pressure chamber 5 communicated with the nozzle near a nozzle orifice (b), and heat energy is applied to the sealed air (d). Air (d) in the pressure chamber 5 is heated suddenly, and ink (i) is discharged. The area of a heating resistor is spread, the width of applied pulses is broadened and the application of heat energy is increased, and a distance between a pressure propagation path as the outlet of the pressure chamber and a nozzle nose is reduced at that time, thus parting ink (i) in the nozzle while using the connecting section of the pressure propagation path 10 and the nozzle as a boundary. One part is flown as ink droplets immediately after the parting.

Ink-jet recording method

We have observed the Fano-Kondo antiresonance in a quantum wire with a side-coupled quantum dot. In a weak coupling regime, dips due to the Fano effect appeared. As the coupling strength increased, conductance in the regions between the dips decreased alternately. From the temperature dependence and the response to the magnetic field, we conclude that the conductance reduction is due to the Fano-Kondo antiresonance. At a Kondo valley with the Fano parameter q approximately 0, the phase shift is locked to pi/2 against the gate voltage when the system is close to the unitary limit in agreement with theoretical predictions by Gerland et al. [Phys. Rev. Lett. 84, 3710 (2000)].

/pdf/observation-of-the-fano-kondo-antiresonance-in-a-quantum-4nrwugb1h3.pdf

Observation of the Fano-Kondo antiresonance in a quantum wire with a side-coupled quantum dot.

Computer-aided education systems are now seeking to provide each student with personalized materials based on a student's individual knowledge. To provide suitable learning materials, tracing each student's knowledge over a period of time is important. However, predicting each student's knowledge is difficult because students tend to forget. The forgetting behavior is mainly because of two reasons: the lag time from the previous interaction, and the number of past trials on a question. Although there are a few studies that consider forgetting while modeling a student's knowledge, some models consider only partial information about forgetting, whereas others consider multiple features about forgetting, ignoring a student's learning sequence. In this paper, we focus on modeling and predicting a student's knowledge by considering their forgetting behavior. We extend the deep knowledge tracing model [17], which is a state-of-the-art sequential model for knowledge tracing, to consider forgetting by incorporating multiple types of information related to forgetting. Experiments on knowledge tracing datasets show that our proposed model improves the predictive performance as compared to baselines. Moreover, we also examine that the combination of multiple types of information that affect the behavior of forgetting results in performance improvement.

Augmenting Knowledge Tracing by Considering Forgetting Behavior

We previously reported that the mouse macrophage galacose and N-acetylgalactosamine-specific lectin (MMGL) may participate in the binding of the macrophages to tumor cells [Oda, S., Sato, M., Toyoshima, S., & Osawa, T. (1989) J. Biochem. 105, 1040-1043]. We now report the cloning and characterization of a cDNA encoding MMGL. The MMGL gene encoded a protein consisting of 304 amino acid residues with a molecular weight of 34,595. The deduced amino acid sequence indicated that MMGL had a single membrane-spanning region, three leucine zipper-like domains, and a carbohydrate recognition domain. Two N-glycosylation sites were found in the extracellular region of MMGL, corresponding to the heavy N-glycosylation in the native MMGL. Comparison of the amino acid sequence of MMGL with those of rat hepatic lectins revealed a high overall sequence homology. The sequence homology was especially high in the putative membrane-spanning region and carbohydrate recognition domain. There was, however, a region of 25 amino acids which did not exist on hepatic lectins. The MMGL cDNA without the region encoding the putative membrane-spanning region and intracellular region was expressed in Escherichia coli. The expressed protein had galactose-binding activity and its sugar-binding specificity was same as that of the native lectin.

Molecular cloning and expression of cDNA encoding a galactose/N-acetylgalactosamine-specific lectin on mouse tumoricidal macrophages.

We propose an ultrafast way to generate spin chirality and spin current in a class of multiferroic magnets using a terahertz circularly polarized laser. Using the Floquet formalism for periodically driven systems, we show that it is possible to dynamically control the Dzyaloshinskii-Moriya interaction in materials with magnetoelectric coupling. This is supported by numerical calculations, by which additional resonant phenomena are found. Specifically, when a static magnetic field is applied in addition to the circularly polarized laser, a large resonant enhancement of spin chirality is observed resembling the electron spin resonance. Spin current is generated when the laser is spatially modulated by chiral plasmonic structures and could be detected using optospintronic devices.

Masahiro Sato

Papers

Ink-jet recording method

Observation of the Fano-Kondo antiresonance in a quantum wire with a side-coupled quantum dot.

Augmenting Knowledge Tracing by Considering Forgetting Behavior

Molecular cloning and expression of cDNA encoding a galactose/N-acetylgalactosamine-specific lectin on mouse tumoricidal macrophages.

Laser-Driven Multiferroics and Ultrafast Spin Current Generation.