M
Masakazu Baba
Researcher at University of Tsukuba
Publications - 93
Citations - 1554
Masakazu Baba is an academic researcher from University of Tsukuba. The author has contributed to research in topics: Molecular beam epitaxy & Scanning tunneling microscope. The author has an hindex of 21, co-authored 93 publications receiving 1475 citations. Previous affiliations of Masakazu Baba include NEC & Sony Broadcast & Professional Research Laboratories.
Papers
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Journal ArticleDOI
Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique
Masakazu Baba,Katsuaki Toh,Kaoru Toko,Noriyuki Saito,Noriko Yoshizawa,Karolin Jiptner,Takashi Sekiguchi,Kosuke O. Hara,Noritaka Usami,Takashi Suemasu +9 more
TL;DR: In this article, an axis-oriented undoped n -BaSi 2 epitaxial films were grown on Si(111) substrates by molecular beam epitaxy, and the crystalline quality and grain boundaries were investigated by means of reflection high-energy electron diffraction, X-ray diffraction and transmission electron microscopy (TEM).
Journal ArticleDOI
Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing
Kosuke O. Hara,Noritaka Usami,Kotaro Nakamura,Ryouta Takabe,Masakazu Baba,Kaoru Toko,Takashi Suemasu +6 more
TL;DR: In this paper, the bulk minority-carrier lifetime of BaSi2 epitaxial films was determined by utilizing a drastic enhancement of lifetime by post-growth annealing at 800 °C, attributed to strain relaxation.
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Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111)
Ryota Takabe,Kosuke O. Hara,Masakazu Baba,Weijie Du,Naoya Shimada,Kaoru Toko,Noritaka Usami,Takashi Suemasu +7 more
TL;DR: In this paper, the authors have fabricated approximately 0.5μm-thick undoped n-BaSi2 epitaxial films with various average grain areas ranging from 2.6 to 23.3μm2 by molecular beam epitaxy, and investigated their minority-carrier lifetime properties by the microwave-detected photoconductivity decay method at room temperature.
Journal ArticleDOI
p-BaSi2/n-Si heterojunction solar cells with conversion efficiency reaching 9.0%
Daichi Tsukahara,Suguru Yachi,Hiroki Takeuchi,Ryota Takabe,Weijie Du,Masakazu Baba,Yunpeng Li,Kaoru Toko,Noritaka Usami,Takashi Suemasu +9 more
TL;DR: In this article, a 20"nm B-doped p-BaSi2 epitaxial layer was formed by molecular beam epitaxy, and the separation of photogenerated minority carriers was promoted at the heterointerface in this structure.
Patent
Separation apparatus and separation method
Toru Sano,Masakazu Baba,Kazuhiro Iida,Hisao Kawaura,Noriyuki Iguchi,Hiroko Someya,Minoru Asogawa +6 more
TL;DR: In this paper, a channel is formed in a substrate and a portion of the channel is provided with a separating portion, where a number of pillars are formed in the separating portion and an adsorptive substance layer having an ad-protective substance, which exhibits a specific interaction for a specific substance, immobilized on the surface thereof.