Nanoimprint lithography (NIL) is a nonconventional lithographic technique for high-throughput patterning of polymer nanostructures at great precision and at low costs. Unlike traditional lithographic approaches, which achieve pattern definition through the use of photons or electrons to modify the chemical and physical properties of the resist, NIL relies on direct mechanical deformation of the resist material and can therefore achieve resolutions beyond the limitations set by light diffraction or beam scattering that are encountered in conventional techniques. This Review covers the basic principles of nanoimprinting, with an emphasis on the requirements on materials for the imprinting mold, surface properties, and resist materials for successful and reliable nanostructure replication.

/pdf/nanoimprint-lithography-methods-and-material-requirements-csc83swyi1.pdf

Nanoimprint Lithography: Methods and Material Requirements**

Nanoimprint is an emerging lithographic technology that promises high-throughput patterning of nanostructures. Based on the mechanical embossing principle, nanoimprint technique can achieve pattern resolutions beyond the limitations set by the light diffractions or beam scatterings in other conventional techniques. This article reviews the basic principles of nanoimprint technology and some of the recent progress in this field. It also explores a few alternative approaches that are related to nanoimprint as well as additive approaches for patterning polymer structures. Nanoimprint technology can not only create resist patterns as in lithography but can also imprint functional device structures in polymers. This property is exploited in several non-traditional microelectronic applications in the areas of photonics and biotechnology.

https://deepblue.lib.umich.edu/bitstream/handle/2027.42/48920/d4_11_r01.pdf?sequence=2

Recent progress in nanoimprint technology and its applications

Advances in top-down and bottom-up surface nanofabrication: techniques, applications & future prospects.

This paper presents continuum simulations of polymer flow during nanoimprint lithography (NIL). The simulations capture the underlying physics of polymer flow from the nanometer to millimeter length scale and examine geometry and thermophysical process quantities affecting cavity filling. Variations in embossing tool geometry and polymer film thickness during viscous flow distinguish different flow driving mechanisms. Three parameters can predict polymer deformation mode: cavity width to polymer thickness ratio, polymer supply ratio and capillary number. The ratio of cavity width to initial polymer film thickness determines vertically or laterally dominant deformation. The ratio of indenter width to residual film thickness measures polymer supply beneath the indenter which determines Stokes or squeeze flow. The local geometry ratios can predict a fill time based on laminar flow between plates, Stokes flow, or squeeze flow. A characteristic NIL capillary number based on geometry-dependent fill time distinguishes between capillary- or viscous-driven flows. The three parameters predict filling modes observed in published studies of NIL deformation over nanometer to millimeter length scales. The work seeks to establish process design rules for NIL and to provide tools for the rational design of NIL master templates, resist polymers and process parameters.

/pdf/impact-of-polymer-film-thickness-and-cavity-size-on-polymer-yvjrrr3umc.pdf

Impact of polymer film thickness and cavity size on polymer flow during embossing: toward process design rules for nanoimprint lithography

A polymer deformation process is studied by numerical simulations and the results are compared with the related experimental results in nanoimprint lithography. The imprint pressures required for successful imprinting and the filling rate into the mold grooves are studied as the aspect ratio of the pattern, initial thickness of the polymer, and the duty ratio of the pattern are changed. The required pressure increases not only for high aspect ratio pattern but also low aspect ratio pattern. Also, the pressure increases when the initial thickness of the polymer decreases to less than about two times that of the groove depth of the mold. These results are explained by the deformation mechanism of the polymer and agree well with the related experimental results. Based on these theoretical and experimental studies, fabrication of a high aspect ratio pattern having 100 nm width and 860 nm height is successfully demonstrated using thick polymer by nanoimprint lithography.

Simulation and experimental study of polymer deformation in nanoimprint lithography

Numerical simulations and experimental studies are carried out to understand the deformation process of thin polymer film in nanoimprint lithography. Deformation of a thin polymer above its glass transition temperature is studied for various imprinting conditions such as the aspect ratios of a mold pattern, initial thickness of the polymer, and imprinting pressure. Cross-sectional profiles of the deformed polymers are simulated by the finite element method based on a rubber elastic model. The results are compared with experimental data. The areal penetration ratio of the polymer into the recessed groove of the mold and residual thickness underneath the mold are quantitatively evaluated. The simulations and the experimental results agree well with each other.

Study of the resist deformation in nanoimprint lithography

Fine dots fabrication using dimpled mold is demonstrated with narrow gaps between neighboring dots. An inverted pyramidal dimpled mold is fabricated by the novel method utilizing the peculiarity of an anisotropic wet chemical etching to form narrow gaps. By this method, the nano-imprinting mold for a quantum dot array with narrow gaps is fabricated beyond the resolution limit of conventional lithography. The optimum imprinting conditions such as imprinting pressure, temperature, sequence, cooling procedure and surface treatment for the mold and substrate are investigated by preliminary experiments using the test mold, which has 2 to 10μm square dot arrays. Based on the preliminary experiments, 250nm-pitched dot array is successfully fabricated by the fine mold with narrow gaps.

/pdf/fine-pattern-imprint-lithography-using-dimpled-mold-3h6zw680c5.pdf

Masaki Fujiwara

Papers

Study of the resist deformation in nanoimprint lithography

Fine pattern imprint lithography using dimpled mold