M
Masanobu Haraguchi
Researcher at University of Tokushima
Publications - 156
Citations - 1776
Masanobu Haraguchi is an academic researcher from University of Tokushima. The author has contributed to research in topics: Plasmon & Surface plasmon. The author has an hindex of 17, co-authored 147 publications receiving 1671 citations. Previous affiliations of Masanobu Haraguchi include University Institute of Technology, Burdwan University.
Papers
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Two-dimensionally localized modes of a nanoscale gap plasmon waveguide
David Pile,Takeshi Ogawa,Dmitri K. Gramotnev,Yosuke Matsuzaki,Kristy C. Vernon,Kenzo Yamaguchi,Toshihiro Okamoto,Masanobu Haraguchi,Masuo Fukui +8 more
TL;DR: In this paper, the authors report numerical analysis and experimental observation of two dimensionally localized plasmonic modes guided by a nanogap in a thin metal film using the finite-difference time-domain algorithm.
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Theoretical and experimental investigation of strongly localized plasmons on triangular metal wedges for subwavelength waveguiding
David Pile,Takeshi Ogawa,Dmitri K. Gramotnev,Takeshi Okamoto,Masanobu Haraguchi,Masuo Fukui,Shigeki Matsuo +6 more
TL;DR: In this article, the authors report numerical analysis and experimental observation of strongly localized plasmons guided by a triangular metal wedge and analyze their dispersion and dissipation using the finite-difference time-domain algorithm.
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Characteristics of gap plasmon waveguide with stub structures
TL;DR: It was found that metal-dielectric-metal plasmon waveguides with a stub structure, i.e. a branch of the waveguide with a finite length, can function as wavelength selective filters of a submicron size.
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Numerical analysis of coupled wedge plasmons in a structure of two metal wedges separated by a gap
TL;DR: The results of the numerical finite-difference time-domain analysis of a strongly localized antisymmetric plasmon coupled across a nanogap between two identical metal wedges are determined and investigated in this paper.
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Electrical Characterization of Nanopolyaniline/Porous Silicon Heterojunction at High Temperatures
TL;DR: In this article, a nanopolyaniline/p-type porous silicon (NPANI/PSi) heterojunction films were chemically fabricated via in situ polymerization.