M
Masao Nishioka
Researcher at University of Tokyo
Publications - 94
Citations - 4567
Masao Nishioka is an academic researcher from University of Tokyo. The author has contributed to research in topics: Quantum dot & Photoluminescence. The author has an hindex of 25, co-authored 93 publications receiving 4360 citations.
Papers
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Proceedings ArticleDOI
Lasing at ~1.3 μm from InAs Quantum Dots with GaInNAs Embedding Layers Grown by Metalorganic Chemical Vapor Deposition
TL;DR: In this paper, self-assembled InAs quantum dot (QD) lasers emitting at 1.29 mum on GaAs substrates grown by metalorganic chemical vapor deposition (MOCVD) were achieved by using GaInNAs embedding layers.
Book ChapterDOI
Photoluminescence Spectra of GaAs Quantum Wires in High Magnetic Fields
Yasushi Nagamune,Yasuhiko Arakawa,Shiro Tsukamoto,Masao Nishioka,Satoshi Sasaki,Noboru Miura +5 more
TL;DR: In this paper, the photoluminescence spectra of GaAs quantum wires in high magnetic fields up to 40 T were investigated and it was shown that the peak shift of the quantum wires with the increase of the applied magnetic field was much smaller than that of the bulk.
Journal ArticleDOI
Ultrafast spectroscopy of carriers and excitons in semiconductor microcavities
TL;DR: In this article, the linear and nonlinear response of strongly coupled GaAs/A1GaAs microcavities using femtosecond spectroscopy was investigated, with a decay time equal to twice the cavity lifetime as expected.
Proceedings ArticleDOI
Growth of InAs/Sb:GaAs quantum dots by the antimony-surfactant mediated metal organic chemical vapor deposition for laser fabrication in the 1.3 μm band
Denis Guimard,Damien Bordel,M. Ishida,Masao Nishioka,Yuki Wakayama,Yu Tanaka,Hisao Sudo,Tsuyoshi Yamamoto,Hayato Kondo,Mitsuru Sugawara,Yasuhiko Arakawa +10 more
TL;DR: In this article, a general method that improves the emission efficiency of InAs quantum dots (QDs) fabricated by antimony-surfactant-mediated growth is presented, which consists in growing InAs QDs on an antimonyirradiated GaAs surface, in order to exploit the surfactant properties of antimony, and removing the excess segregated antimony by applying a high arsenic pressure before capping.