Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 03 nanometer The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis

Room-temperature ultraviolet nanowire nanolasers

Diarylethenes for Memories and Switches

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

First-principles calculations have evolved from mere aids in explaining and supporting experiments to powerful tools for predicting new materials and their properties. In the first part of this review we describe the state-of-the-art computational methodology for calculating the structure and energetics of point defects and impurities in semiconductors. We will pay particular attention to computational aspects which are unique to defects or impurities, such as how to deal with charge states and how to describe and interpret transition levels. In the second part of the review we will illustrate these capabilities with examples for defects and impurities in nitride semiconductors. Point defects have traditionally been considered to play a major role in wide-band-gap semiconductors, and first-principles calculations have been particularly helpful in elucidating the issues. Specifically, calculations have shown that the unintentional n-type conductivity that has often been observed in as-grown GaN cannot be a...

First-principles calculations for defects and impurities: Applications to III-nitrides

The demand for compact ultraviolet laser devices is increasing, as they are essential in applications such as optical storage, photocatalysis, sterilization, ophthalmic surgery and nanosurgery. Many researchers are devoting considerable effort to finding materials with larger bandgaps than that of GaN. Here we show that hexagonal boron nitride (hBN) is a promising material for such laser devices because it has a direct bandgap in the ultraviolet region. We obtained a pure hBN single crystal under high-pressure and high-temperature conditions, which shows a dominant luminescence peak and a series of s-like exciton absorption bands around 215 nm, proving it to be a direct-bandgap material. Evidence for room-temperature ultraviolet lasing at 215 nm by accelerated electron excitation is provided by the enhancement and narrowing of the longitudinal mode, threshold behaviour of the excitation current dependence of the emission intensity, and a far-field pattern of the transverse mode.

Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal.

InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs produced 215 mW at a forward current of 2.3 A, with a sharp peak of light output at 417 nm that had a full width at half-maximum of 1.6 nm under the pulsed current injection at room temperature. The laser threshold current density was 4 kA/cm2. The emission wavelength is the shortest one ever generated by a semiconductor laser diode.

https://iopscience.iop.org/article/10.1143/JJAP.35.L74/pdf

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.

High-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum well structures based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates. The typical green LEDs had a peak wavelength of 525 nm and full width at half-maximum (FWHM) of 45 nm. The output power, the external quantum efficiency and the luminous intensity of green LEDs at a forward current of 20 mA were 1 mW, 2.1% and 4 cd, respectively. The luminous intensity of green LEDs (4 cd) was about 40 times higher than that of conventional green GaP LEDs (0.1 cd). Typical yellow LEDs had a peak wavelength of 590 nm and FWHM of 90 nm. The output power of yellow LEDs was 0.5 mW at 20 mA. When the emission wavelength of III-V nitride LEDs with quantum well structures increased from the region of blue to yellow, the output power decreased dramatically.

https://iopscience.iop.org/article/10.1143/JJAP.34.L797/pdf

High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures

Superbright green InGaN single quantum well (SQW) structure light-emitting diodes (LEDs) with a luminous intensity of 12 cd were fabricated The luminous intensity of these green InGaN SQW LEDs (12 cd) was about 100 times higher than that of conventional green GaP LEDs (01 cd) The output power, the external quantum efficiency, the peak wavelength and the full width at half-maximum of green SQW LEDs were 3 mW, 63%, 520 nm and 30 nm, respectively, at a forward current of 20 mA The p-AlGaN/InGaN/n-GaN structure of green InGaN SQW LEDs were grown by metalorganic chemical vapor deposition on sapphire subsutrates

https://iopscience.iop.org/article/10.1143/JJAP.34.L1332/pdf

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Low-resistivity p-type GaN films, which were obtained by N2-ambient thermal annealing or low-energy electron-beam irradiation (LEEBI) treatment, showed a resistivity as high as 1×106 Ωcm after NH3-ambient thermal annealing at temperatures above 600°C. In the case of N2-ambient thermal annealing at temperatures between room temperature and 1000°C, the low-resistivity p-type GaN films showed no change in resistivity, which was almost constant between 2 Ωcm and 8 Ωcm. These results indicate that atomic hydrogen produced by NH3 dissociation at temperatures above 400°C is related to the hole compensation mechanism. A hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed. The formation of acceptor-H neutral complexes causes hole compensation, and deep-level and weak blue emissions in photoluminescence.

https://iopscience.iop.org/article/10.1143/JJAP.31.1258/pdf

Masayuki Senoh

Papers

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.

High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Hole Compensation Mechanism of P-Type GaN Films