M
Matteo Perenzoni
Researcher at fondazione bruno kessler
Publications - 117
Citations - 1679
Matteo Perenzoni is an academic researcher from fondazione bruno kessler. The author has contributed to research in topics: CMOS & Detector. The author has an hindex of 20, co-authored 106 publications receiving 1329 citations.
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Proceedings ArticleDOI
SPADnet: A fully digital, networked approach to MRI compatible PET systems based on deep-submicron CMOS technology
Edoardo Charbon,Claudio Bruschini,C. Veerappan,Leo H. C. Braga,Nicola Massari,Matteo Perenzoni,Leonardo Gasparini,David Stoppa,Richard Walker,Ahmet T. Erdogan,Robert Henderson,Steve Easr,Lindsay A. Grant,Balázs Játékos,Ferenc Ujhelyi,Gábor Erdei,Emoke Lorincz,Luc Andre,L. Maingault,Vincent Reboud,Loick Verger,Eric Gros d'Aillon,Peter Major,Z. Papp,Gabor Nerneth +24 more
TL;DR: This paper is the first comprehensive presentation of the SPADnet concept, a fully digital, networked MRI compatible time-of-flight PET system, exploiting the speed and integration density of deep-submicron CMOS technologies.
Proceedings ArticleDOI
A CMOS THz staring imager with in-pixel electronics
TL;DR: A 16 × 16 staring imaging array was implemented in a 0.15-µm standard CMOS technology for terahertz detection in the range of 0.8 THz to 1.5 THz as mentioned in this paper.
Proceedings ArticleDOI
A Multi-Spectral Analog Photon Counting Readout Circuit for X-Ray Hybrid Pixel Detectors
TL;DR: In this article, an all-analog pixel architecture for the readout of X-ray pixel detectors is proposed, comprising a self-triggered reset charge amplifier, three autocalibrated comparators, an energy window identification logic and three analog counters with adjustable dynamic range.
Journal ArticleDOI
Characterization-Based Modeling of Retriggering and Afterpulsing for Passively Quenched CMOS SPADs
Manuel Moreno-Garcia,Lucio Pancheri,Matteo Perenzoni,Rocío del Río,Oscar Guerra Vinuesa,Ángel Rodríguez-Vázquez +5 more
TL;DR: It is shown that retriggering can be also described in terms of this model, suggesting that it is linked to carriers trapped in the shallow levels of the semiconductor and that should be taken into account when considering the total amount of afterpulsing events.
Journal ArticleDOI
A Fast 50 × 40-Pixels Single-Point DTOF SPAD Sensor With Photon Counting and Programmable ROI TDCs, With σ <4 mm at 3 m up to 18 klux of Background Light
Matteo Perenzoni,Nicola Massari,Leonardo Gasparini,Manuel Moreno Garcia,Daniele Perenzoni,David Stoppa +5 more
TL;DR: In this paper, a front-side illuminated array of $50\times 40$ single-photon avalanche diode pixels for single-point distance measurement is implemented in a 015-mm CMOS technology, showing a pixel size of $385\times 335,\,\mu \text{m}^{2}$ with variable fill factor from 48% to 153%.