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Daniele Perenzoni
Researcher at fondazione bruno kessler
Publications - 21
Citations - 496
Daniele Perenzoni is an academic researcher from fondazione bruno kessler. The author has contributed to research in topics: Detector & Pixel. The author has an hindex of 10, co-authored 21 publications receiving 381 citations.
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Journal ArticleDOI
A 64 $\times$ 64-Pixels Digital Silicon Photomultiplier Direct TOF Sensor With 100-MPhotons/s/pixel Background Rejection and Imaging/Altimeter Mode With 0.14% Precision Up To 6 km for Spacecraft Navigation and Landing
TL;DR: A 64×64-pixel 3-D imager based on single-photon avalanche diodes (SPADs) for long-range applications, such as spacecraft navigation and landing, consuming less than 100 mW.
Journal ArticleDOI
A $160 \times 120$ Pixel Analog-Counting Single-Photon Imager With Time-Gating and Self-Referenced Column-Parallel A/D Conversion for Fluorescence Lifetime Imaging
TL;DR: A single-photon, time-gated, pixel imager is presented for its application in fluorescence lifetime imaging microscopy, capable of gathering information about photon position, number, and time distribution, enabling cost-effective devices for scientific imaging applications.
Journal ArticleDOI
Terahertz detection by epitaxial-graphene field-effect-transistors on silicon carbide
Federica Bianco,Daniele Perenzoni,Domenica Convertino,S. L. De Bonis,Davide Spirito,Matteo Perenzoni,Camilla Coletti,Miriam S. Vitiello,Alessandro Tredicucci,Alessandro Tredicucci +9 more
TL;DR: In this paper, a room temperature detection of terahertz radiation by means of antenna-coupled field effect transistors (FETs) fabricated using epitaxial graphene grown on silicon carbide was reported.
Proceedings ArticleDOI
6.5 A 64×64-pixel digital silicon photomultiplier direct ToF sensor with 100Mphotons/s/pixel background rejection and imaging/altimeter mode with 0.14% precision up to 6km for spacecraft navigation and landing
TL;DR: Among all available technologies for a 2D array of direct time-of-flight pixels, CMOS single-photon avalanche diodes (SPADs) represent the ideal candidate due to their rugged design and electronics integration.
Journal ArticleDOI
THz detection with epitaxial graphene field effect transistors on silicon carbide
Federica Bianco,Daniele Perenzoni,Domenica Convertino,S. L. De Bonis,Davide Spirito,Miriam S. Vitiello,Camilla Coletti,Matteo Perenzoni,Alessandro Tredicucci +8 more
TL;DR: In this paper, two independent detection mechanisms are found: plasma wave assisted detection and thermoelectric effect, which is ascribed to the presence of junctions along the FET channel.