M
Matthew J. Steer
Researcher at University of Glasgow
Publications - 130
Citations - 2238
Matthew J. Steer is an academic researcher from University of Glasgow. The author has contributed to research in topics: Quantum dot & Quantum well. The author has an hindex of 26, co-authored 126 publications receiving 2067 citations. Previous affiliations of Matthew J. Steer include University of Sheffield.
Papers
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Journal ArticleDOI
Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure
Huiyun Liu,Mark Hopkinson,C. N. Harrison,Matthew J. Steer,R. Frith,Ian R. Sellers,D. J. Mowbray,M. S. Skolnick +7 more
TL;DR: In this paper, the structural and optical properties of GaAs-based 1.3 μm InAs/InGaAs dots-in-a-well (DWELL) structures have been optimized in terms of different InGaAs and GaAs growth rates, the amount of InAs deposited, and In composition of the INGaAs quantum well (QW).
Journal ArticleDOI
Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots.
Matthew J. Steer,D. J. Mowbray,W. R. Tribe,M. S. Skolnick,M. D. Sturge,Mark Hopkinson,A. G. Cullis,C. R. Whitehouse,R. T. Murray +8 more
TL;DR: A spectroscopic investigation of the electronic energy levels and carrier-relaxation mechanisms in self-organized InAs/GaAs quantum dots reveals two mechanisms for the relaxation of carriers from the excited states to the ground state: a nonresonant mechanism dominant in the upper state, and a resonant mechanism involving the emission of one or more LO phonons of well-defined energy.
Journal ArticleDOI
Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer
Huiyun Liu,Matthew J. Steer,Tom J. Badcock,D. J. Mowbray,M. S. Skolnick,P. Navaretti,Kristian M. Groom,Mark Hopkinson,Richard A. Hogg +8 more
TL;DR: In this paper, the effects of a thin GaAsSb strain-reducing layer on the optical properties of InAs∕GaAs quantum dots (QDs) are investigated.
Journal ArticleDOI
InGaAs∕AlAsSb∕InP quantum cascade lasers operating at wavelengths close to 3μm
Dmitry G. Revin,John W. Cockburn,Matthew J. Steer,R. J. Airey,Mark Hopkinson,Andrey B. Krysa,Luke R. Wilson,S. Menzel +7 more
TL;DR: In this article, the authors reported the realization of short wavelength (3.05μm) InP lattice-matched In0.53Ga0.47As∕AlAs0.56Sb0.44 quantum cascade lasers (QCLs) for temperatures up to 300K with a low temperature (80K) threshold current density of approximately 2.6kA∕cm2, and a characteristic temperature of T 0∼130K.
Journal ArticleDOI
Room-temperature 1.6-μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer
Huiyun Liu,Matthew J. Steer,Tom J. Badcock,D. J. Mowbray,M. S. Skolnick,F. Suarez,Jo Shien Ng,Mark Hopkinson,John P. R. David +8 more
TL;DR: In this paper, the emission of InAs quantum dots (QDs) capped with GaAsSb can be extended from 1.28 to 1.6μm by increasing the Sb composition of the capping layer from 14% to 26%.