Communication at millimeter wave (mmWave) frequencies is defining a new era of wireless communication. The mmWave band offers higher bandwidth communication channels versus those presently used in commercial wireless systems. The applications of mmWave are immense: wireless local and personal area networks in the unlicensed band, 5G cellular systems, not to mention vehicular area networks, ad hoc networks, and wearables. Signal processing is critical for enabling the next generation of mmWave communication. Due to the use of large antenna arrays at the transmitter and receiver, combined with radio frequency and mixed signal power constraints, new multiple-input multiple-output (MIMO) communication signal processing techniques are needed. Because of the wide bandwidths, low complexity transceiver algorithms become important. There are opportunities to exploit techniques like compressed sensing for channel estimation and beamforming. This article provides an overview of signal processing challenges in mmWave wireless systems, with an emphasis on those faced by using MIMO communication at higher carrier frequencies.

An Overview of Signal Processing Techniques for Millimeter Wave MIMO Systems

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

http://www.acsu.buffalo.edu/~jmjornet/papers/2014/j1.pdf

Full length article: Terahertz band: Next frontier for wireless communications

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Design Of Analog Cmos Integrated Circuits

Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

In this work, a high linearity LNA at 6 GHz with 1.15 dB NF, 27.7 dB gain is reported with IHP 130nm SiGe BiCMOS technology. The reported LNA achieves a highly linear performance and has -12.2 dBm IP1dB and 4.2 dBm IIP3. A two-stage cascode amplifier with inductive degeneration topology is used to obtain high gain. Optimum transistor biasing and sizing achieves an input matching without using any inductor which allowed low NF and high linearity. Additionally, custom, not PDK defined, transistor layouts have been created to decrease the core's parasitics to enhance the LNA's performance. LNA uses 3.3V as supply and consumes 98 mW DC power while occupying a 0.75 mm2 die area without pads. The reported LNA achieved one of the highest figures-of-merit among silicon-based LNAs and has comparable performance to SOI CMOS LNAs.

A High Linearity 6 GHz LNA in 130 nm SiGe Technology

This paper presents the design and thermal challenges of large-scale silicon-based power amplifiers (PAs). As an example, a Ka-Band PA in 130 nm silicon germanium (SiGe) BiCMOS with an aluminum back end of line (BEOL) is presented. It is a pseudo differential transformer-based design featuring efficient 2:1 transformers for a high impedance transformation ratio. The PA achieves Psat of 23.2 dBm at 26 % power added efficiency (PAE). Differing results due to on-chip thermal effects are presented and discussed in this paper.

Thermal Analysis and Design of a Ka-Band Power Amplifier in 130 nm SiGe BiCMOS

We present an ultra wideband push-push based frequency doubler with differential outputs and a 3 dB-bandwidth from 4.8 to 80 GHz. The maximum conversion gain is 1.7 dB at 25 GHz and -13dBm input signal. An on-chip active balun provides the differential drive signal enabling a good fundamental rejection over a wide bandwidth. Measurements up to 100 GHz verify the circuits functionality. The output bandwidth of 75 GHz combined with less than 3 dB output power variation exceeds the results of previous publications with differential outputs.

Ultra-Wideband Frequency Doubler with Differential Outputs in SiGe BiCMOS

In this article, three main aspects of passive millimeter-wave integrated filter realization are exposed. Firstly, the importance of the transmission line choice is discussed by comparing microstrip and coplanar waveguide (CPW) in BiCMOS 0.25µm technology. 50-Ω transmission lines exhibit similar losses around 0.6 dB/mm at 60 GHz. Secondly, two filter topologies, a dual-behavior resonator based filter and a dualmode ring based filter, are compared in terms of insertion losses, surface area and out-of-band rejection. They are both designed using microstrip lines and exhibit a similar 3dB fractional bandwidth (FBW 3dB ) around 12% with a 60 GHz center frequency. Finally, a miniaturization method is presented using Metal-Insulator-Metal (MIM) capacitive loading. A loaded filter is then realized and characterized. Similar electrical performance are demonstrated with a size reduction factor of 2.3.

60 GHz planar filters and transmission lines characterization in 0.25µm BiCMOS technology

This work describes the development of an amplifier frequency doubler chain (AFDC) operating at around 300 GHz based on SiGe BiCMOS technology. The driver amplifier is based on the differential cascode configuration, which employs coupled-line transformers for compact design. The frequency doubler is based on the class-B topology, which is known for exhibiting a large output power with low DC power consumption. The integrated AFDC, which consists of the frequency doubler and the preceding driver amplifier, exhibited a measured peak output power and DC-to-RF efficiency of -0.9 dBm and 0.97%, respectively, along with a conversion gain of -0.1 dB. It operates from 284 to 328 GHz with a 0-dBm input signal, consuming a total DC power of only 84 mW. The chip size is 720 × 310 μm2, excluding RF and DC pads.

Mehmet Kaynak

Papers

A High Linearity 6 GHz LNA in 130 nm SiGe Technology

Thermal Analysis and Design of a Ka-Band Power Amplifier in 130 nm SiGe BiCMOS

Ultra-Wideband Frequency Doubler with Differential Outputs in SiGe BiCMOS

60 GHz planar filters and transmission lines characterization in 0.25µm BiCMOS technology

A SiGe BiCMOS Amplifier-Frequency Doubler Chain Operating for 284–328 GHz