Communication at millimeter wave (mmWave) frequencies is defining a new era of wireless communication. The mmWave band offers higher bandwidth communication channels versus those presently used in commercial wireless systems. The applications of mmWave are immense: wireless local and personal area networks in the unlicensed band, 5G cellular systems, not to mention vehicular area networks, ad hoc networks, and wearables. Signal processing is critical for enabling the next generation of mmWave communication. Due to the use of large antenna arrays at the transmitter and receiver, combined with radio frequency and mixed signal power constraints, new multiple-input multiple-output (MIMO) communication signal processing techniques are needed. Because of the wide bandwidths, low complexity transceiver algorithms become important. There are opportunities to exploit techniques like compressed sensing for channel estimation and beamforming. This article provides an overview of signal processing challenges in mmWave wireless systems, with an emphasis on those faced by using MIMO communication at higher carrier frequencies.

An Overview of Signal Processing Techniques for Millimeter Wave MIMO Systems

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

http://www.acsu.buffalo.edu/~jmjornet/papers/2014/j1.pdf

Full length article: Terahertz band: Next frontier for wireless communications

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Design Of Analog Cmos Integrated Circuits

Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

Low-noise amplifiers (LNAs) are necessary components for any communications system. Single-event transients (SETs) induced by energetic particles in space can corrupt the data in an RF receiver. Using p-n-p silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs), instead of their more common n-p-n counterparts, has been shown to be an effective mitigation technique in digital, analog, and RF circuits. Since p-n-p SiGe HBTs tend to have lower performance than n-p-n SiGe HBTs, in this article, the tradeoffs between performance and SET robustness have been evaluated through the use of simulations. Two LNAs were designed using an algorithmic design technique: one using only n-p-n SiGe HBTs, and the other using only p-n-p devices. The n-p-n LNA had higher peak gain and lower noise figure at the center frequency of 5 GHz when compared to the p-n-p LNA, by 3.2 and 0.4 dB, respectively. However, the n-p-n LNA also produced transients with amplitudes larger than the p-n-p LNA across all simulated linear energy transfers. Although the p-n-p LNA has lower overall performance, it is also more robust to SETs. Thus, the choice between using n-p-n and p-n-p SiGe HBTs for an RF design will depend on application requirements.

Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform

This paper presents various RF-MEMS technologies and devices integrated to a standard BiCMOS process. SiGe BiCMOS technology acts as the baseline process for the integration of modules increasing the functionality and by this way enlarging the spectrum for embedded system applications. Back-end-off-line (BEOL) integrated RF-MEMS switches for mm-wave applications, through silicon vias (TSVs) for RF-grounding and 3D integration and a fully BiCMOS integrated microchannel technology for microfluidic applications are discussed. This paper covers the aspects of both technology challenges and performances figures.

MEMS — BiCMOS monolithic integration

This paper presents a 4-bit passive phase shifter for X-band (8-12 GHz) phased-arrays, implemented in 0.25-μm SiGe BiCMOS process. All bits are digitally controlled. The 22.5° and 45° bits are based on switched low-pass network while the 90° and 180° bits are based on switching between high-pass/low-pass filters. Filters are implemented using on-chip spiral inductors and high-Q MIM capacitors. Switching functionality is obtained by isolated NMOS transistors employing resistive body floating technique. All bits are optimized to minimize the RMS phase error. Ordering of bits is optimized so as to minimize the overall insertion loss. Simulated insertion loss is 12±2 dB and RMS phase error is less than 2° over X-band frequencies.

A 4-bit SiGe passive phase shifter for X-band phased arrays

This paper presents a two-dimensional capacitive sensor array implemented in a 0.13-µm silicon technology for material characterization. The circuit is based on an oscillator operating at 4.5 GHz with a single inductor and a distributed capacitor. The 6×6 sensor array can be individually selected. When a dielectric material is in the near field of a pixel, it results in a shift of the oscillator frequency. A mixer is used to down-convert the the high-frequency component to an intermediate frequency. A digital core is used to acquire and process the data. The array is capable of detecting capacitance shift with a sensitivity down to 1.25 aF and a spatial resolution of 6 µm.

A Silicon Based 4.5-GHz Near-field Capacitive Sensing Imaging Array

In this paper, CPW transmission lines and Dual Behavior Resonator (DBR) filters implemented in SiGe BiCMOS 0.25-μm technology are presented. Three CPW lines, whose characteristic impedances are between 35 Ω and 80 Ω, exhibit attenuation loss lower than 0.7 dB/mm at 60 GHz. Two DBR filters based either on microstrip or on CPW transmission lines are compared. The filter with microstrip lines has already been measured and exhibits 11.6% of 3-dB relative fractional bandwidth (FEWmb) and 5.4 dB of insertion losses at 60 GHz. The second one is supposed to have similar performance with lower insertion loss (3.3 dB) and its measurement will be available for the conference.

Mehmet Kaynak

Papers

Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform

MEMS — BiCMOS monolithic integration

A 4-bit SiGe passive phase shifter for X-band phased arrays

A Silicon Based 4.5-GHz Near-field Capacitive Sensing Imaging Array

Characterization of CPW transmission lines and 60GHz DBR Filters in 0.25μm BiCMOS technology