Mehmet Kaynak

TL;DR: The results presented here demonstrate the efficiency of this technique in tracking or predicting deviation due to manufacturing process dispersions or other device features difficult to account for experimentally.

TL;DR: In this paper, a microbolometer is modeled, fabricated and measured using finite element modeling in ANSYS and the deformations on the arm structure are measured and compared with the developed model.

TL;DR: First results of characterization of medullobastoma cell lines using high frequency dielectrophoresis approach at frequencies ranging up to few hundreds of MHz are introduced, paving the way to novel and complementary cell discrimination approach based on a label free HF-DEP crossover frequency signature measurement.

TL;DR: In this article, a 4-bit passive phase shifter for X-band (8-12 GHz) phased-arrays, implemented in 0.25-μm SiGe BiCMOS process, is presented.

TL;DR: In this paper, the authors present a multifunctional technology platform with different monolithic integrated modules like THz devices, i.e. complementary SiGe heterojunction bipolar transistors, silicon photonics components in particular Ge-PIN photo detectors and finally the wafer-level integration of µ-fluidic channels for sensor applications.