M
Mehmet Parlak
Researcher at Middle East Technical University
Publications - 166
Citations - 2013
Mehmet Parlak is an academic researcher from Middle East Technical University. The author has contributed to research in topics: Thin film & Band gap. The author has an hindex of 21, co-authored 139 publications receiving 1718 citations. Previous affiliations of Mehmet Parlak include Pamukkale University & Durham University.
Papers
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The effects of zinc nitrate, zinc acetate and zinc chloride precursors on investigation of structural and optical properties of ZnO thin films
TL;DR: In this paper, structural and optical properties of ZnO thin films were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and optical transmittance spectra.
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Structural, optical and electrical properties of Al-doped ZnO microrods prepared by spray pyrolysis
TL;DR: Al-doped ZnO thin films were obtained on glass substrates by spray pyrolysis in air atmosphere as mentioned in this paper, which resulted in pronounced changes in the morphology of the films such as the reduction in the rod diameter and deterioration in the surface quality of the rods.
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Structural, optical and magnetic properties of Cr doped ZnO microrods prepared by spray pyrolysis method
TL;DR: In this article, a series of Cr-doped ZnO micro-rod arrays were fabricated by a spray pyrolysis method, and X-ray diffraction patterns of the samples showed that the undoped and Cr doped samples exhibit hexagonal crystal structure.
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Structural, optical and magnetic properties of Cd1−xCoxS thin films prepared by spray pyrolysis
TL;DR: In this article, structural, optical and magnetic properties of CdS thin films with the addition of Co prepared by spray pyrolysis of Co-doped Cd1−xCoxS (x⩽0.10) thin films were investigated.
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On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures
TL;DR: In this article, the frequency dependent capacitance-voltage and conductancevoltage properties of metal-ferroelectric-insulator-semiconductor (MFIS) structures were investigated by considering series resistance (R"s) and surface state effects in the frequency range of 1kHz-5MHz.