M
Mengkun Tian
Researcher at Georgia Institute of Technology
Publications - 51
Citations - 1597
Mengkun Tian is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Chemistry & Nanoparticle. The author has an hindex of 17, co-authored 43 publications receiving 1125 citations. Previous affiliations of Mengkun Tian include University of Tennessee & Oak Ridge National Laboratory.
Papers
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Journal ArticleDOI
Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy
Kai Wang,Bing Huang,Bing Huang,Mengkun Tian,Frank Ceballos,Ming-Wei Lin,Masoud Mahjouri-Samani,Abdelaziz Boulesbaa,Alexander A. Puretzky,Christopher M. Rouleau,Mina Yoon,Hui Zhao,Kai Xiao,Gerd Duscher,David B. Geohegan +14 more
TL;DR: The interlayer coupling for the WSe2/WS2 bilayer heterojunctions indicated by substantial PL quenching, enhanced absorption, and rapid charge transfer was found to be insensitive to the relative twist angle, indicating that stamping provides a robust approach to realize reliable optoelectronics.
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Structure and Formation Mechanism of Black TiO2 Nanoparticles
Mengkun Tian,Masoud Mahjouri-Samani,Gyula Eres,Ritesh Sachan,Mina Yoon,Matthew F. Chisholm,Kai Wang,Alexander A. Puretzky,Christopher M. Rouleau,David B. Geohegan,Gerd Duscher +10 more
TL;DR: Using advanced transmission electron microscopy methods, it is shown that the outermost layer of black TiO2 nanoparticles consists of a disordered Ti2O3 shell, which is a narrow-band-gap semiconductor.
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Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type and Optical Response in Monolayer MoSe2-x Crystals.
Masoud Mahjouri-Samani,Liangbo Liang,Akinola D. Oyedele,Akinola D. Oyedele,Yong-Sung Kim,Yong-Sung Kim,Yong-Sung Kim,Mengkun Tian,Nicholas Cross,Kai Wang,Ming-Wei Lin,Abdelaziz Boulesbaa,Christopher M. Rouleau,Alexander A. Puretzky,Kai Xiao,Mina Yoon,Gyula Eres,Gerd Duscher,Gerd Duscher,Bobby G. Sumpter,David B. Geohegan +20 more
TL;DR: It is shown that post-selenization using pulsed laser evaporated Se atoms can repair Se-vacant sites to nearly recover the properties of the pristine crystals and reveal the underlying mechanisms for the corresponding vacancy-induced electrical and optical transitions.
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Pulsed Laser Deposition of Photoresponsive Two‐Dimensional GaSe Nanosheet Networks
Masoud Mahjouri-Samani,Ryan Gresback,Mengkun Tian,Kai Wang,Alexander A. Puretzky,Christopher M. Rouleau,Gyula Eres,Ilia N. Ivanov,Kai Xiao,Michael A. McGuire,Gerd Duscher,David B. Geohegan +11 more
TL;DR: In this article, the authors explore pulsed laser deposition (PLD) for the synthesis of functional metal chalcogenide (GaSe) nanosheet networks by stoichiometric transfer of laser vaporized material from bulk GaSe targets in Ar background gas.
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Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe2
Xufan Li,Alexander A. Puretzky,Xiahan Sang,Santosh Kc,Mengkun Tian,Frank Ceballos,Masoud Mahjouri-Samani,Kai Wang,Raymond R. Unocic,Hui Zhao,Gerd Duscher,Valentino R. Cooper,Christopher M. Rouleau,David B. Geohegan,Kai Xiao +14 more
TL;DR: In this paper, isoelectronic doping is presented as a new strategy to form stable alloys and suppress defects and enhance photoluminescence (PL) in CVD-grown TMD monolayers.