We show that the pseudorelativistic physics of graphene near the Fermi level can be extended to three dimensional (3D) materials. Unlike in phase transitions from inversion symmetric topological to normal insulators, we show that particular space groups also allow 3D Dirac points as symmetry protected degeneracies. We provide criteria necessary to identify these groups and, as an example, present ab initio calculations of β-cristobalite BiO(2) which exhibits three Dirac points at the Fermi level. We find that β-cristobalite BiO(2) is metastable, so it can be physically realized as a 3D analog to graphene.

Dirac Semimetal in Three Dimensions

Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.

/pdf/recent-progress-in-2d-group-va-semiconductors-from-theory-to-340ay01tfh.pdf

Recent progress in 2D group-VA semiconductors: from theory to experiment

Rise of silicene: A competitive 2D material

A novel crystal configuration of sandwiched S-Mo-Se structure (Janus SMoSe) at the monolayer limit has been synthesized and carefully characterized in this work. By controlled sulfurization of monolayer MoSe2 the top layer of selenium atoms are substituted by sulfur atoms while the bottom selenium layer remains intact. The peculiar structure of this new material is systematically investigated by Raman, photoluminescence and X-ray photoelectron spectroscopy and confirmed by transmission-electron microscopy and time-of-flight secondary ion mass spectrometry. Density-functional theory calculations are performed to better understand the Raman vibration modes and electronic structures of the Janus SMoSe monolayer, which are found to correlate well with corresponding experimental results. Finally, high basal plane hydrogen evolution reaction (HER) activity is discovered for the Janus monolayer and DFT calculation implies that the activity originates from the synergistic effect of the intrinsic defects and structural strain inherent in the Janus structure.

Janus Monolayer Transition Metal Dichalcogenides

Two-dimensional (2D) materials have attracted tremendous research interest since the breakthrough of graphene. Their unique optical, electronic, and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. Their atomic thickness and exposed huge surface even make them highly designable and manipulable, leading to the extensive application potentials. What's more, after acquiring the qualification for being the candidate for next-generation devices, the assembly of 2D materials monomers into mass or ordered structure is also of great importance, which will determine their ultimate industrialization. By designing the monomers and regulating their assembling behavior, the exploration of 2D materials toward the next-generation circuits can be spectacularly achieved. In this review, we will first overview the emerging 2D materials and then offer a clear guideline of varied physical and chemical strategies for tuning their properties. Furthermore, assembly strategies of 2D materials will also be included. Finally, challenges and outlooks in this promising field are featured on the basis of its current progress.

Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

Discovery of two-dimensional (2D) topological insulator such as group-V films initiates challenges in exploring exotic quantum states in low dimensions. Here, we perform first-principles calculations to study the geometric and electronic properties in 2D arsenene monolayer with hydrogenation (HAsH). We predict a new σ-type Dirac cone related to the px,y orbitals of As atoms in HAsH, dependent on in-plane tensile strain. Noticeably, the spin-orbit coupling (SOC) opens a quantum spin Hall (QSH) gap of 193 meV at the Dirac cone. A single pair of topologically protected helical edge states is established for the edges, and its QSH phase is confirmed with topological invariant Z2 = 1. We also propose a 2D quantum well (QW) encapsulating HAsH with the h-BN sheet on each side, which harbors a nontrivial QSH state with the Dirac cone lying within the band gap of cladding BN substrate. These findings provide a promising innovative platform for QSH device design and fabrication operating at room temperature.

/pdf/controllable-band-structure-and-topological-phase-transition-qhr7jl1osx.pdf

Controllable band structure and topological phase transition in two-dimensional hydrogenated arsenene

The search for a new quantum spin Hall (QSH) phase and effective manipulation of its edge states are very important for both fundamental sciences and practical applications. Here, we use first-principles calculations to study the strain-driven topological phase transition of two-dimensional (2D) arsenene monolayer. We find that the band gap of arsenene decreases with increasing strain and changes from indirect to direct, and then the s-p band inversion takes place at the Г point as the tensile strain is larger than 11.14%, which leads to a nontrivially topological state. A single pair of topologically protected helical edge states is established for the edge of arsenene, and their QSH states are confirmed with the nontrivial topological invariant Z 2 = 1. We also propose high-dielectric BN as an ideal substrate for the experimental synthesis of arsenene, maintaining its nontrivial topology. These findings provide a promising candidate platform for topological phenomena and new quantum devices operating at nanoelectronics.

https://iopscience.iop.org/article/10.1088/0022-3727/49/5/055305/pdf

Tunable quantum spin Hall effect via strain in two-dimensional arsenene monolayer

First-principle study of optical properties of Cu-doped CdS

The search for new quantum spin Hall (QSH) phase and effective manipulations of their edge states are very important for both fundamental sciences and practical applications. Here, we use first-principles calculations to study the strain-driven topological phase transition of two-dimensional (2D) arsenene monolayer. We find that the band gap of arsenene decreases with increasing strain and changes from indirect to direct, and then the s-p band inversion takes place at {\Gamma} point as the tensile strain is larger than 11.14%, which lead to a nontrivially topological state. A single pair of topologically protected helical edge states is established for the edge of arsenene, and their QSH states are confirmed with nontrivial topological invariant Z2 = 1. We also propose high-dielectric BN as an ideal substrate for the experimental synthesis of arsenene, maintaining its nontrivial topology. These findings provide a promising candidate platform for topological phenomena and new quantum devices operating at nanoelectronics.

Miao-juan Ren

Papers

Controllable band structure and topological phase transition in two-dimensional hydrogenated arsenene

Tunable quantum spin Hall effect via strain in two-dimensional arsenene monolayer

First-principle study of optical properties of Cu-doped CdS

Tunable Quantum Spin Hall Effect via Strain in two-Dimensional Arsenene Monolayer

Enhanced band gap opening in germanene by organic molecule adsorption