Showing papers by "Michel Kazan published in 2011"

Interpolation Between the Acoustic Mismatch Model and the Diffuse Mismatch Model for the Interface Thermal Conductance: Application to InN/GaN Superlattice

Abstract: Alvarez FX, 2010, J APPL PHYS, V107, DOI 10.1063-1.3386464; Balandin A, 1998, PHYS REV B, V58, P1544, DOI 10.1103-PhysRevB.58.1544; Basso H. C., 1984, Phonon Scattering in Condensed Matter. Proceedings of the Fourth International Conference; Basso H. C., 1984, Proceedings of the 17th International Conference on Low Temperature Physics, LT-17; BERMAN R, 1953, PROC R SOC LON SER-A, V220, P171, DOI 10.1098-rspa.1953.0180; Bungaro C, 2000, PHYS REV B, V61, P6720, DOI 10.1103-PhysRevB.61.6720; Casimir HBG, 1938, PHYSICA, V5, P495, DOI 10.1016-S0031-8914(38)80162-2; Chen G, 1998, PHYS REV B, V57, P14958, DOI 10.1103-PhysRevB.57.14958; De Bellis L, 2000, J THERMOPHYS HEAT TR, V14, P144; Eisenmenger W, 1982, PHONON SCATTERING CO, P204; Gander W, 2000, BIT, V40, P84, DOI 10.1023-A:1022318402393; Kazan M, 2008, PHYS REV B, V77, DOI 10.1103-PhysRevB.77.180302; Kazan M, 2010, J APPL PHYS, V107, DOI 10.1063-1.3340973; Kazan M, 2008, APPL PHYS LETT, V92, DOI 10.1063-1.2937113; Kazan M, 2010, SURF SCI REP, V65, P111, DOI 10.1016-j.surfrep.2010.02.001; KHALATNIKOV IM, 1952, ZH EKSP TEOR FIZ+, V22, P687; KLEMENS PG, 1966, PHYS REV, V148, P845, DOI 10.1103-PhysRev.148.845; Lee SM, 1997, J APPL PHYS, V81, P2590, DOI 10.1063-1.363923; LIN ME, 1994, APPL PHYS LETT, V64, P2557, DOI 10.1063-1.111573; Lin W, 2010, APPL PHYS LETT, V96, DOI 10.1063-1.3360199; Lin W., 2009, NANOTECHNOLOGY, V20, P485204; Lyeo HK, 2006, PHYS REV B, V73, DOI 10.1103-PhysRevB.73.144301; MATSUMOTO DS, 1977, PHYS REV B, V16, P3303, DOI 10.1103-PhysRevB.16.3303; Mok E., 1986, PHYS LETT A, V11, P473; NEEPER DA, 1964, PHYS REV, V135, P1028; Osborn R, 2001, PHYS REV LETT, V87, DOI 10.1103-PhysRevLett.87.017005; Park B. S., 1971, J PHYS SOC JPN, V30, P760; Ponce FA, 1997, NATURE, V386, P351, DOI 10.1038-386351a0; Reddy P., 2006, APPL PHYS LETT, V87; SAHLING S, 1981, J LOW TEMP PHYS, V45, P457, DOI 10.1007-BF00654493; SCHMIDT C, 1976, J LOW TEMP PHYS, V22, P597, DOI 10.1007-BF00659062; SOFFER SB, 1967, J APPL PHYS, V38, P1710, DOI 10.1063-1.1709746; Swartz E. T., 1986, Phonon Scattering in Condensed Matter V. Proceedings of the Fifth International Conference; SWARTZ ET, 1989, REV MOD PHYS, V61, P605, DOI 10.1103-RevModPhys.61.605; WEBER J, 1978, PHYS REV LETT, V40, P1469, DOI 10.1103-PhysRevLett.40.1469; WEIS O, 1969, Z ANGEW PHYSIK, V26, P325; WOLFMEYE.MW, 1970, PHYS LETT A, VA 31, P401, DOI 10.1016-0375-9601(70)91009-1; Ziman J. M., 1967, ELECT PHONONS

Temperature and directional dependences of the infrared dielectric function of free standing silicon nanowire

Abstract: An approach to calculate the infrared dielectric function of semiconductor nanostructures is presented and applied to silicon (Si) nanowires (NW's). The phonon modes symmetries and frequencies are calculated by means of the elastic continuum medium theory. The modes strengths and damping are calculated from a model for lattice dynamics and perturbation theory. The data are used in anisotropic Lorentz oscillator model to generate the temperature and directional dependences of the infrared dielectric function of free standing Si NW's. Our results showed that in the direction perpendicular to the NW axis, the complex dielectric function is identical to that of bulk Si. However, along the NW axis, the infrared dielectric function is a strong function of the wavelength. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Development of a polarization resolved mid-IR near-field microscope

Abstract: We have developed a scattering-type microscope operating in the mid-IR range with a polarization analysis. The experimental development and the operation of the microscope are described. The optical system can provide for each pixel of the image a matrix similar to a Jones matrix. Examples of polarization resolved images obtained on a SiO2/Si surface grating with a tungsten probe are shown and a high optical resolution is clearly demonstrated through the imaging of submicron metallic lines.

Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes

Abstract: This paper focuses on the formation of thin n+p junctions in p-type Silicon Carbide (SiC) epitaxial layers using two kinds of Nitrogen implantations. The standard beam ion implantations and PULSIONTM processes were performed at two distinct energies (700 eV and 7 keV), and the subsequent annealing was held at 1600°C in a resistive furnace specifically adapted to SiC material. No measurable electrical activity was obtained for both implantations performed at 700 eV, due to some outdiffusion of N dopants during the annealing despite a low surface roughness (rms ~ 1.4 nm) and no residual damage detected by RBS/C. A higher sheet resistance was measured in plasma-implanted samples at 7 keV (in comparison with beam-line implanted samples), which is partly related to N outdiffusion. The profiles of N atoms beam-implanted at 7 keV are not affected by the annealing. The corresponding electrical activation is fully completed.

Mid-IR imaging of doped silicon gratings at a decananometer scale

Abstract: Mid-IR nanoscopy has proved its ability to recognize material at nanometer scale through spectroscopic or even single wavelength imaging [1,2]. A high optical contrast can indeed be obtained between different materials as the permittivity of solid materials exhibit strong variations near phononic resonances, usually below 1000cm−1. One limitation of the technique is that a weak contrast is obtained if the permittivities of two materials are too close, which can be the case for example far from phonon resonances. As another example, doping imaging in silicon is difficult still difficult at 10.6µm, although the free electrons or holes can modify notably the permittivities as shown in figure 1. It has been shown previously that even longer wavelengths seem to be necessary to image unambiguously different doped zones [3,4] at least with common near-field probes. However, in a recent paper we have calculated that the phonon confinement occurring in decananometric scale objects such as near-field probes can lead to a drastic modification of the probe's permittivity [5]. This effect can be very useful as for a range of probe permittivity, much stronger contrast can be expected. To experimentally demonstrate these theoretical expectations, we have built a mid-IR near field microscope and imaged doped Si gratings with a period of 2 µm (fabricated in CEA-LETI) with carefully prepared tungsten tip stuck on a tuning fork. The detection has been done using tips with different radius (30 nm to 100 nm) and a very strong contrast between P doped and P+ doped can be observed for a variety of small-radius probes. An example of highly contrasted profile obtained on the doped silicon grating is shown in figure2.