M
Mingquan Bao
Researcher at Ericsson
Publications - 45
Citations - 367
Mingquan Bao is an academic researcher from Ericsson. The author has contributed to research in topics: Amplifier & Noise figure. The author has an hindex of 8, co-authored 45 publications receiving 249 citations. Previous affiliations of Mingquan Bao include Chalmers University of Technology.
Papers
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Journal ArticleDOI
A $D$ -Band 48-Gbit/s 64-QAM/QPSK Direct-Conversion I/Q Transceiver Chipset
Sona Carpenter,Dhecha Nopchinda,Morteza Abbasi,Zhongxia Simon He,Mingquan Bao,Thomas Eriksson,Herbert Zirath +6 more
TL;DR: In this paper, a single-chip 110-170-GHz ( $D$ -band) direct conversion in-phase/quadrature-phase (I/Q) transmitter (TX) and receiver (RX) monolithic microwave integrated circuits (MMICs), realized in a 250-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology, is presented.
Proceedings ArticleDOI
Spectrum Efficient D-band Communication Link for Real-time Multi-gigabit Wireless Transmission
Vessen Vassilev,Zhongxia Simon He,Sona Carpenter,Herbert Zirath,Yu Yan,Ahmed Hassona,Mingquan Bao,Thomas Emanuelsson,Jingjing Chen,Mikael Horberg,Yinggang Lit,Jonas Hansrydl +11 more
TL;DR: The TxlRx front-end modules were integrated in two radio units to demonstrate a real time wireless data transmission and the highest data rate achieved was 5.3 Gbit/s using 64 QAM modulation over a 1 GHz channel with spectrum efficiency of 5bit/slHz.
Journal ArticleDOI
A 24–28-GHz Doherty Power Amplifier With 4-W Output Power and 32% PAE at 6-dB OPBO in 150-nm GaN Technology
TL;DR: In this paper, a two-stage GaN Doherty power amplifier with a small auxiliary transistor was designed and characterized at millimeter-wave (mm-wave) frequencies, where the low output impedance of the auxiliary transistor loads the Doherty combining network, which lowers the power added efficiency.
Journal ArticleDOI
Broadband $Gm$ -Boosted Differential HBT Doublers With Transformer Balun
TL;DR: In this article, a Gm-boosted differential common-base configuration using either capacitive or transformer-based coupling between base and emitters was proposed. But the results demonstrate that the resulting DAC can achieve better fundamental rejection than any previous reported frequency doubler.
Proceedings ArticleDOI
A 110-to-147 GHz Frequency Sixtupler in a 130 nm Sige Bicmos Technology
TL;DR: In this article, a D-band sixtupler consisting of a frequency tripler, a frequency doubler, as well as amplifiers is presented, and the optimum arrangement for those blocks is investigated.