M
Mingsheng Qin
Researcher at Chinese Academy of Sciences
Publications - 18
Citations - 438
Mingsheng Qin is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Band gap & Thin film. The author has an hindex of 7, co-authored 18 publications receiving 386 citations. Previous affiliations of Mingsheng Qin include Lucideon.
Papers
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Journal ArticleDOI
Phase-Controlled Synthesis of Cobalt Sulfides for Lithium Ion Batteries
Yaoming Wang,Jianjun Wu,Yufeng Tang,Xujie Lü,Chongyin Yang,Mingsheng Qin,Fuqiang Huang,Fuqiang Huang,Xin Li,Xin Li,Xia Zhang +10 more
TL;DR: The approach combining solid-state assembly and heat treatment provides a simple and versatile way to prepare various metal chalcogeides for energy storage applications.
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Observation of an Intermediate Band in Sn-doped Chalcopyrites with Wide-spectrum Solar Response
Chongyin Yang,Mingsheng Qin,Yaoming Wang,Dongyun Wan,Fuqiang Huang,Fuqiang Huang,Jianhua Lin +6 more
TL;DR: Diffuse reflection spectra and photoluminescence spectra reveal extra absorption and emission spectra induced by the IBs, which are further supported by first-principle calculations.
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Cr incorporation in CuGaS2 chalcopyrite: A new intermediate-band photovoltaic material with wide-spectrum solar absorption
TL;DR: In this paper, an intermediate band semiconductor CuGa1−xCrxS2 was investigated by the self-consistent many-body GW approach (scGW) and further confirmed by the experimental results.
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Fe-substituted indium thiospinels: New intermediate band semiconductors with better absorption of solar energy
Ping Chen,Haijie Chen,Mingsheng Qin,Chongyin Yang,Wei Zhao,Yufeng Liu,Wenqing Zhang,Fuqiang Huang +7 more
TL;DR: In this paper, the optical properties and electronic structure of Fe-doped In2S3 and MgIn2S4 have been investigated, and the results of first-principles calculations revealed that the Fe substituted at the octahedral In site would introduce a partially filled IB into the band gap.
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A facile molecular precursor-based Cu(In,Ga)(S,Se)2 solar cell with 8.6% efficiency
Yian Xie,Yian Xie,Haijie Chen,Haijie Chen,Aimin Li,Xiaolong Zhu,Lei Zhang,Mingsheng Qin,Yaoming Wang,Yufeng Liu,Fuqiang Huang,Fuqiang Huang +11 more
TL;DR: In this article, a simple, safe, and clean molecular precursor-based solution method was developed to fabricate a Cu(In,Ga)(S,Se)2 absorber layer.