M
Morten Willatzen
Researcher at Chinese Academy of Sciences
Publications - 282
Citations - 5081
Morten Willatzen is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Quantum dot & Boundary value problem. The author has an hindex of 32, co-authored 268 publications receiving 4349 citations. Previous affiliations of Morten Willatzen include Center for Excellence in Education & Technical University of Denmark.
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Inclusion of Nonlinear Strain Effects in the Hamiltonian for Nanoscale Semiconductor Structures
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Theoretical study of the electromechanical efficiency of a loaded tubular dielectric elastomer actuator
TL;DR: In this article, the electromechanical efficiency of a loaded tubular dielectric elastomer actuator (DEA) is investigated theoretically, where the external system is modeled by a frequency-dependent mechanical impedance which exerts a certain force on the DEA depending on its deformation.
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Energy Optimization of a Mirror‐Symmetric Spherical Triboelectric Nanogenerator
TL;DR: In this article , a general theoretical analysis of a 3D generic TENG structure is presented using a dimensionless formulation, and it is demonstrated that the optimal TENG geometry does not depend on the frequency of the moving dielectric but the external ohmic impedance for maximum power output is inversely proportional to the frequency.
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Comment on: “Confined states in two-dimensional flat elliptic quantum dots and elliptic quantum wires” [Physica E 11 (2001) 345] ☆
TL;DR: In this article, the authors argue that the two-dimensional elliptic quantum dot problem with finite barrier cannot be exactly solved, contrary to a recent assertion (van den Broek and Peeters, 2001).
Dynamic coupling of piezoelectric effects, spontaneous polarization and strain in lattice-mismatched semiconducter quantum-well heterostructures
TL;DR: In this article, a static and dynamic analysis of the combined and selfconsistent influence of spontaneous polarization, piezoelectric effects, lattice mismatch, and strain effects is presented for a three-layer one-dimensional AlN/GaN wurtzite quantum well structure with GaN as the central quantum-well layer.