M
Morten Willatzen
Researcher at Chinese Academy of Sciences
Publications - 282
Citations - 5081
Morten Willatzen is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Quantum dot & Boundary value problem. The author has an hindex of 32, co-authored 268 publications receiving 4349 citations. Previous affiliations of Morten Willatzen include Center for Excellence in Education & Technical University of Denmark.
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Out‐of‐Plane Polarization in Bent Graphene‐Like Zinc Oxide and Nanogenerator Applications
TL;DR: In this paper, a high efficient piezoelectric nanogenerator operation is demonstrated based on dynamic bending of graphene-like ZnO nanosheets, where energy is harvested by an external resistor.
Journal Article
Spurious Solutions in the Multiband Effective Mass Theory Applied to Low Dimensional Nanostructures
TL;DR: In this article, the authors analyze the appearance of non-physical solutions arising in the application of the effective mass theory to low dimensional nanostructures and show that a failure to restrict their Fourier expansion coefficients to small k components would lead to the appearing of nonphysical solutions.
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Type-II quantum-dot-in-nanowire structures with large oscillator strength for optical quantum gate applications
TL;DR: In this paper, the authors present a numerical investigation of the exciton energy and oscillator strength in type-II nanowire quantum dots and propose a double quantum dot structure featuring a strongly localized exciton wave function.
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Sound propagation in a moving fluid confined by cylindrical walls—a comparison between an exact analysis and the local-plane-wave approximation
TL;DR: In this paper, a discussion of sound propagation in a moving fluid confined by cylindrical walls is presented, where a single "exact" ordinary differential equation in the acoustic pressure is derived for the case where the medium flow v 0 ( r ) depends on the radial co-ordinate only and points in the axial direction.
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Contact Electrification by Quantum-Mechanical Tunneling
TL;DR: The model is applicable to electron transport and contact electrification between e.g. a metal and a dielectric solid and shows that the tunneling dynamics is very sensitive to the vacuum potential versus the two solids conduction-band edges and the thickness of the vacuum gap.