M
Morten Willatzen
Researcher at Chinese Academy of Sciences
Publications - 282
Citations - 5081
Morten Willatzen is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Quantum dot & Boundary value problem. The author has an hindex of 32, co-authored 268 publications receiving 4349 citations. Previous affiliations of Morten Willatzen include Center for Excellence in Education & Technical University of Denmark.
Papers
More filters
Journal ArticleDOI
Influence of Aspect Ratio on the Lowest States of Quantum Rods
TL;DR: In this article, the nature of the lowest states in a quantum rod is studied as a function of aspect ratio using a four-band Burt-foreman model, and the aspect ratio at crossing is found to be shape but not size dependent, and it is shown that the nonseparability and multiband nature of this problem leads to a complex ground-state envelope function and also to the phenomenon of level crossing.
Journal ArticleDOI
Dynamics of a nanowire superlattice in an ac electric field
TL;DR: In this paper, the authors investigated the dynamics of a finite nanowire superlattice driven by an ac electric field by solving numerically the time-dependent Schrodinger equation.
Journal ArticleDOI
Comment on ‘‘Multiband coupling effects on electron quantum well intersubband transitions’’ [J. Appl. Phys. 77, 747 (1995)]
TL;DR: In this paper, the influence of band mixing on the selection rules for intersubband and interband optical transitions in quantum wells was discussed and a multiband k⋅p theory was proposed.
Journal ArticleDOI
High performance piezotronic devices based on non-uniform strain
Yaming Zhang,Gongwei Hu,Yan Zhang,Yan Zhang,Lucy Li,Morten Willatzen,Zhong Lin Wang,Zhong Lin Wang +7 more
TL;DR: In this article, a model that a mechanical stress is gradient distributed along a piezoelectric-semiconductor material was proposed, and the electric properties of piezotronic p-n junction with non-uniform strain was simulated by using the finite element method, including the currentvoltage characteristics and carrier concentration.