M
Motonobu Takeya
Researcher at Sony Broadcast & Professional Research Laboratories
Publications - 62
Citations - 1139
Motonobu Takeya is an academic researcher from Sony Broadcast & Professional Research Laboratories. The author has contributed to research in topics: Layer (electronics) & Semiconductor. The author has an hindex of 17, co-authored 62 publications receiving 1125 citations.
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Patent
Nitride semiconductor, semiconductor device, and method of manufacturing the same
TL;DR: In this paper, a seed crystal is formed into stripes on a substrate with a buffer layer sandwiched there between, and then a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer.
Patent
Semiconductor device and method of manufacturing the same
Katsuyoshi Shibuya,Takeharu Asano,Satoru Kijima,Katsunori Yanashima,Motonobu Takeya,Masao Ikeda,Tomonori Hino,Takashi Yamaguchi,Shinro Ikeda,Osamu Goto +9 more
TL;DR: In this paper, an n-side contact layer is grown from the crystalline part of a seed crystal, and a concave part communicatively connected to the opening part is formed within the substrate.
Patent
Multibeam semiconductor laser, semiconductor light- emitting device and semiconductor device
Tsuyoshi Tojo,Yoshifumi Yabuki,Shinichi Ansai,Tomonori Hino,Osamu Goto,Tsuyoshi Fujimoto,Osamu Matsumoto,Motonobu Takeya,Yoshio Oofuji +8 more
TL;DR: In a multi-beam semiconductor laser including nitride III-V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures as discussed by the authors, one of the anode electrodes is formed to bridge over another of the cathode electrodes via an insulating film.
Journal ArticleDOI
GaN-Based High Power Blue-Violet Laser Diodes
Tsuyoshi Tojyo,Takeharu Asano,Motonobu Takeya,Tomonori Hino,Satoru Kijima,Shu Goto,Shiro Uchida,Masao Ikeda +7 more
TL;DR: In this paper, the photoluminescence intensities from GaN and GaInN multiple quantum well active layers in the ELO-GaN wing region were found to be higher than those in the seed region.
Patent
Semiconductor light emitting device and its manufacturing method
TL;DR: In this article, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer.