Patent
Nitride semiconductor, semiconductor device, and method of manufacturing the same
TLDR
In this paper, a seed crystal is formed into stripes on a substrate with a buffer layer sandwiched there between, and then a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer.Abstract:
Provided is a nitride semiconductor having a larger low-defective region on a surface thereof, a semiconductor device using the nitride semiconductor, a method of manufacturing a nitride semiconductor capable of easily reducing surface defects in a step of forming a layer through lateral growth, and a method of manufacturing a semiconductor device manufactured by the use of the nitride semiconductor. A seed crystal portion is formed into stripes on a substrate with a buffer layer sandwiched therebetween. Then, a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer. In a first step, a low temperature growth portion having a trapezoidal-shaped cross section in a layer thickness direction is formed at a growth temperature of 1030° C., and in a second step, lateral growth predominantly takes place at a growth temperature of 1070° C. Then, a high temperature growth potion is formed between the low temperature growth portions. Thereby, hillocks and lattice defects can be reduced in a region of the surface of the nitride semiconductor layer above the low temperature growth portion.read more
Citations
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Patent
Semiconductor device, and manufacturing method thereof
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Jong-in Yang,Taehyung Kim,Si-hyuk Lee,Sang-Yeob Song,Cheolsoo Sone,Hak-Hwan Kim,Jin-Hyun Lee +6 more
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Laser based display method and system
James W. Raring,Paul Rudy +1 more
TL;DR: In this article, the authors present a projection display system where one or more laser diodes are used as a light source for illustrating images, using gallium nitride containing material.
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HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
TL;DR: In this paper, two or more light emitting diode devices are fabricated on a semipolar or non-polar GaN containing substrate, each of which emits substantially polarized emission.
References
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Journal ArticleDOI
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
TL;DR: The extent and microstructural characteristics of the lateral overgrowth were a strong function of stripe orientation and threading dislocations, originating from the interface of the underlying GaN with the AlN buffer layer were contained in the GaN grown in the window regions.
Journal ArticleDOI
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
TL;DR: In this paper, the microstructure and the lateral epitaxy mechanism of formation of homoepitaxially and selectively grown GaN structures within windows in SiO2 masks have been investigated by transmission electron microscopy (TEM) and scanning electron microscope.
Journal ArticleDOI
Pendeoepitaxy of gallium nitride thin films
Kevin J. Linthicum,Thomas Gehrke,Darren B. Thomson,Eric Carlson,Pradeep Rajagopal,Timothy M. Smith,Dale Batchelor,Robert F. Davis +7 more
TL;DR: Pendeoepitaxy, a form of selective lateral growth of GaN thin films has been developed using GaN/AlN/6H-SiC(0001) substrates and produced by organometallic vapor phase epitaxy.
Journal ArticleDOI
Pendeo-epitaxy: a new approach for lateral growth of gallium nitride films
Tsvetanka Zheleva,Scott A. Smith,Darren B. Thomson,Kevin J. Linthicum,Pradeep Rajagopal,Robert F. Davis +5 more
TL;DR: In this article, the gallium nitride (GaN) films were selected to grow along the planes of GaN columns and over adjacent etched wells without the use of a supporting mask or substrate.
Patent
Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
TL;DR: In this paper, a method of fabricating a gallium-nitride-based semiconductor structure on a substrate includes the steps of forming a mask having at least one opening therein directly on the substrate, growing a buffer layer through the opening, and growing a layer of gallium nitride upwardly from the buffer layer and laterally across the mask.