T
Takeharu Asano
Researcher at Sony Broadcast & Professional Research Laboratories
Publications - 61
Citations - 1077
Takeharu Asano is an academic researcher from Sony Broadcast & Professional Research Laboratories. The author has contributed to research in topics: Layer (electronics) & Semiconductor. The author has an hindex of 18, co-authored 61 publications receiving 1065 citations.
Papers
More filters
Patent
Nitride semiconductor, semiconductor device, and method of manufacturing the same
TL;DR: In this paper, a seed crystal is formed into stripes on a substrate with a buffer layer sandwiched there between, and then a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer.
Patent
Semiconductor device and method of manufacturing the same
Katsuyoshi Shibuya,Takeharu Asano,Satoru Kijima,Katsunori Yanashima,Motonobu Takeya,Masao Ikeda,Tomonori Hino,Takashi Yamaguchi,Shinro Ikeda,Osamu Goto +9 more
TL;DR: In this paper, an n-side contact layer is grown from the crystalline part of a seed crystal, and a concave part communicatively connected to the opening part is formed within the substrate.
Journal ArticleDOI
GaN-Based High Power Blue-Violet Laser Diodes
Tsuyoshi Tojyo,Takeharu Asano,Motonobu Takeya,Tomonori Hino,Satoru Kijima,Shu Goto,Shiro Uchida,Masao Ikeda +7 more
TL;DR: In this paper, the photoluminescence intensities from GaN and GaInN multiple quantum well active layers in the ELO-GaN wing region were found to be higher than those in the seed region.
Patent
Semiconductor light emitting device and its manufacturing method
TL;DR: In this article, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer.
Patent
Method of manufacturing semiconductor device
TL;DR: In this paper, a method of manufacturing a semiconductor device, which is adapted to prevent the deposition of a material on a laser light emitting edge, thereby enabling an improvement in longevity characteristics of a laser.