An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The past couple of years have witnessed a remarkable burst in the development of organic field-effect transistors (OFETs), with a number of organic semiconductors surpassing the benchmark mobility of 10 cm2/(V s). In this perspective, we highlight some of the major milestones along the way to provide a historical view of OFET development, introduce the integrated molecular design concepts and process engineering approaches that lead to the current success, and identify the challenges ahead to make OFETs applicable in real applications.

Integrated materials design of organic semiconductors for field-effect transistors

Solution coating of organic semiconductors offers great potential for achieving low-cost manufacturing of large-area and flexible electronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control of thin-film morphology. Here, we report an approach—termed fluid-enhanced crystal engineering (FLUENCE)—that allows for a high degree of morphological control of solution-printed thin films. We designed a micropillar-patterned printing blade to induce recirculation in the ink for enhancing crystal growth, and engineered the curvature of the ink meniscus to control crystal nucleation. Using FLUENCE, we demonstrate the fast coating and patterning of millimetre-wide, centimetre-long, highly aligned single-crystalline organic semiconductor thin films. In particular, we fabricated thin films of 6,13-bis(triisopropylsilylethynyl) pentacene having non-equilibrium single-crystalline domains and an unprecedented average and maximum mobilities of 8.1±1.2 cm2 V−1 s−1 and 11 cm2 V−1 s−1. FLUENCE of organic semiconductors with non-equilibrium single-crystalline domains may find use in the fabrication of high-performance, large-area printed electronics. Solution printing of organic semiconductors could in principle be scaled to industrial needs, yet attaining aligned single-crystals directly with this method has been challenging. By using a micropillar-patterned printing blade designed to enhance the control of crystal nucleation and growth, thin films of macroscopic, highly aligned single crystals of organic semiconductors can now be fabricated.

Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains

A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.

Nitride semiconductor light emitting device

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure–property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Organic semiconductor crystals

Provided is a nitride semiconductor having a larger low-defective region on a surface thereof, a semiconductor device using the nitride semiconductor, a method of manufacturing a nitride semiconductor capable of easily reducing surface defects in a step of forming a layer through lateral growth, and a method of manufacturing a semiconductor device manufactured by the use of the nitride semiconductor. A seed crystal portion is formed into stripes on a substrate with a buffer layer sandwiched therebetween. Then, a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer. In a first step, a low temperature growth portion having a trapezoidal-shaped cross section in a layer thickness direction is formed at a growth temperature of 1030° C., and in a second step, lateral growth predominantly takes place at a growth temperature of 1070° C. Then, a high temperature growth potion is formed between the low temperature growth portions. Thereby, hillocks and lattice defects can be reduced in a region of the surface of the nitride semiconductor layer above the low temperature growth portion.

Nitride semiconductor, semiconductor device, and method of manufacturing the same

In a multi-beam semiconductor laser including nitride III-V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III-V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

Multibeam semiconductor laser, semiconductor light- emitting device and semiconductor device

A method for forming organic single-crystal arrays from solution is demonstrated using an organic semiconductor, 3,9-bis(4-ethylphenyl)-peri-xanthenoxanthene (C(2) Ph-PXX). Supersaturation of C(2) Ph-PXX/tetralin solution is spatially changed by making a large difference in solvent evaporation to generate nuclei at the designated location. The method is simple to implement since it employs only a micropattern and control of the solvent vapor pressure during growth.

Organic single-crystal arrays from solution-phase growth using micropattern with nucleation control region.

Work for loading meat with bone on a clamping device or a hanger installed on a deboning line of meat with bone can completely be automated and personal cut is realized. In a method for loading meat with bone (1) on a conveyance device in a deboning process for performing deboning while meat with bone (1) is conveyed by the conveyance devices (11 and 12), a tip projection (8) of meat with bone (1) is loaded on conveyers (23 and 24) toward a conveyer travel direction, and meat with bone (1) is transferred to a downstream-side of the conveyer. Movement of meat with bone (1) is temporarily delayed on a guide face of a V-shape guide (27) which is arranged on a conveyer face of the conveyer downstream-side and in which an interval (s1) through which the tip projection can pass is formed in a center. The tip projection (8) of meat with bone (1) is projected forward from the interval (s1) by movement of the conveyer face, and the tip projection (8) is positioned. A multi-axis articulated arm (31) having holding parts (312 and 312) operated along an operation track which is previously set holds the positioned tip projection (8) and it is conveyed to a loading part (32) of the conveyance device.

Loading method and loading device of meat with bone and loading operation program

A GaN semiconductor light-emitting device formed on a GaN single-crystal substrate and having a structure owing to which the current leak is less. The GaN semiconductor laser device (50) includes p- and n-side electrodes provided on the multilayer structure and has the same structure as conventional GaN semiconductor laser devices fabricated on a sapphire substrate except that a GaN single crystal substrate (52) is used in place of a sapphire substrate and a multilayer structure of the GaN compound semiconductor layer is formed directly on the GaN single crystal substrate (52) without forming a GaN-ELO structure layer. The GaN single crystal substrate (52) has continuous band-like core sections (52a) each having a width of 10 μm, and the distance between the core sections (52) is approximately 400 μm. A laser stripe (30), a metal pad (37) of a p-side electrode (36), and an n-side electrode (38) are provided to the multilayer structure on the region other than the core sections (52a). The horizontal distance Sp between the side edge of the metal pad (37) and the edge of the core section and the horizontal distance Sn between the n-side electrode (38) and the edge of the core section (52a) are both 95 μm.

Osamu Goto

Papers

Nitride semiconductor, semiconductor device, and method of manufacturing the same

Multibeam semiconductor laser, semiconductor light- emitting device and semiconductor device

Organic single-crystal arrays from solution-phase growth using micropattern with nucleation control region.

Loading method and loading device of meat with bone and loading operation program

Gan semiconductor device