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Muhammad Sulaman

Researcher at Beijing Institute of Technology

Publications -  47
Citations -  674

Muhammad Sulaman is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Photodetector & Specific detectivity. The author has an hindex of 10, co-authored 30 publications receiving 247 citations.

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Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study.

TL;DR: Electrochemical impedance spectroscopy is used to analyze the recombination resistance, carrier lifetime, capacitance, and conductivity of two typical PbS CQD solar cells, and it provides a guide to design high-performance quantum-dots solar cells.
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Interlayer of PMMA Doped with Au Nanoparticles for High-Performance Tandem Photodetectors: A Solution to Suppress Dark Current and Maintain High Photocurrent.

TL;DR: A solution to suppress dark current and maintain high photocurrent by using polymethyl methacrylate doped with Au nanoparticles (NPs) as the interlayer for enhanced-performance tandem photodetectors, and the physical mechanism for the enhanced performance is presented.
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High performance solution-processed infrared photodetector based on PbSe quantum dots doped with low carrier mobility polymer poly(N-vinylcarbazole)

TL;DR: In this paper, a solution-processed infrared photodetector based on lead selenide (PbSe) CQDs blended with low hole mobility polymer poly(N-vinylcarbazole) (PVK) is presented.
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High performance solution-processed infrared photodiode based on ternary PbSxSe1−x colloidal quantum dots

TL;DR: In this paper, a solution-processed near-infrared photodiode ITO/ZnO/PbSxSe1−x/Au, in which ternary PbS xSe 1−x QDs act as the active layer and the ZnO interlayer acts as electron-transporting layer, was demonstrated.
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Ultra-sensitive solution-processed broadband photodetectors based on vertical field-effect transistor

TL;DR: Novel vertical FET (VFET) based photodetectors are presented, in which the active layer is sandwiched between porous source electrode and planar drain electrode, resulting to ultrashort channel length, promising to fabricate broadband photodETectors with high performance and good stability by this easy approach.