M
Mustafa Öztürk
Researcher at Gebze Institute of Technology
Publications - 148
Citations - 2575
Mustafa Öztürk is an academic researcher from Gebze Institute of Technology. The author has contributed to research in topics: Exchange bias & Hysteresis. The author has an hindex of 24, co-authored 128 publications receiving 2376 citations. Previous affiliations of Mustafa Öztürk include Boğaziçi University & Süleyman Demirel University.
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The effect of organophosphate insecticide chlorpyrifos-ethyl on lipid peroxidation and antioxidant enzymes (in vitro)
TL;DR: It can be concluded that in vitro administration of CE resulted in the induction of erythrocyte lipid peroxidation and significant changes in antioxidant enzyme activities, suggesting that ROS and/or free radicals may be involved in the toxic effects of CE.
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Low temperature hydrothermal synthesis and characterization of Mn doped cobalt ferrite nanoparticles
TL;DR: A series of Mn doped cobalt ferrite compounds with the formula Mn x Co 1− x Fe 2 O 4 where x ǫ = 0.0, 0.2, 0.4, 0., 0.8 and 1.0 were successfully synthesized by polyethylene glycol-assisted hydrothermal method as discussed by the authors.
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Effect of atorvastatin on the recurrence rates of atrial fibrillation after electrical cardioversion.
Mehmet Ozaydin,Ercan Varol,Suleyman M. Aslan,Zehra Küçüktepe,Abdullah Dogan,Mustafa Öztürk,Ahmet Altinbas +6 more
TL;DR: Atorvastatin decreased the recurrence rate of AF after EC, and high-sensitivity C-reactive protein levels decreased significantly 48 hours after EC compared with the baseline levels in group I.
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Septic arthritis in childhood.
TL;DR: Whether there was a difference between septic arthritis combined with osteomyelitis and SA alone with regard to clinical and laboratory findings, such as symptoms on admission, age, sex, joint involvement and isolated micro‐organisms, and a relationship between age and joint involvement in SA is determined.
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Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD
TL;DR: In this article, a series of GaN layers were grown on Si(1?1)?1) with different buffer layers and buffer thicknesses and were characterized by Nomarski, atomic force microscopy, high-resolution x-ray diffraction (XRD) and photoluminescence (PL) measurements.