http://academic.oup.com/milmed/article-pdf/146/7/506/24126715/milmed-146-7-506.pdf

Goodman and Gilman's The Pharmacological Basis of Therapeutics

Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis is placed on the examination of how these models agree with general physical principles. New concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.

Recent advances in Schottky barrier concepts

This paper reviews the body of evidence that major depression is accompanied by a decreased antioxidant status and by induction of oxidative and nitrosative (ION and increased 8-hydroxy-2-deoxyguanosine, indicating oxidative DNA damage. There is also evidence in major depression, that ON and increased IgM-mediated immune responses against membrane fatty acids, like phosphatidyl inositol (Pi); oleic, palmitic, and myristic acid; and NO modified amino-acids, e.g. NO-tyrosine, NO-tryptophan and NO-arginine; and NO-albumin. There is a significant association between depression and polymorphisms in O&NS genes, like manganese superoxide dismutase, catalase, and myeloperoxidase. Animal models of depression very consistently show lowered antioxidant defences and activated O&NS pathways in the peripheral blood and the brain. In animal models of depression, antidepressants consistently increase lowered antioxidant levels and normalize the damage caused by O&NS processes. Antioxidants, such as N-acetyl-cysteine, compounds that mimic GPX activity, and zinc exhibit antidepressive effects. This paper reviews the pathways by which lowered antioxidants and O&NS may contribute to depression, and the (neuro)degenerative processes that accompany that illness. It is concluded that aberrations in O&NS pathways are--together with the inflammatory processes--key components of depression. All in all, the results suggest that depression belongs to the spectrum of (neuro)degenerative disorders.

A review on the oxidative and nitrosative stress (O&NS) pathways in major depression and their possible contribution to the (neuro)degenerative processes in that illness.

The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

The physics and chemistry of the Schottky barrier height

Concerns about the changing environment and fossil fuel depletion have prompted much controversy and scrutiny. One way to address these issues is to use concentrating photovoltaics (CPV) as an alternate source for energy production. Multijunction solar cells built from III–V semiconductors are being evaluated globally in CPV systems designed to supplement electricity generation for utility companies. The high efficiency of III–V multijunction concentrator cells, with demonstrated efficiency over 40% since 2006, strongly reduces the cost of CPV systems, and makes III–V multijunction cells the technology of choice for most concentrator systems today. In designing multijunction cells, consideration must be given to the epitaxial growth of structures so that the lattice parameter between material systems is compatible for enhancing device performance. Low resistance metal contacts are crucial for attaining high performance. Optimization of the front metal grid pattern is required to maximize light absorption and minimize I2R losses in the gridlines and the semiconductor sheet. Understanding how a multijunction device works is important for the design of next-generation high efficiency solar cells, which need to operate in the 45%–50% range for a CPV system to make better economical sense. However, the survivability of solar cells in the field is of chief concern, and accelerated tests must be conducted to assess the reliability of devices during operation in CPV systems. These topics are the focus of this review.

https://www.spectrolab.com/pv/support/Cotal_III_V_multijunction_photovoltaics.pdf

III–V multijunction solar cells for concentrating photovoltaics

This work presents an attempt related to the charging behaviour of interface states to the nonideal forward bias current-voltage (I-V) and the reverse bias capacitance-voltage (C-V) characteristics of AlnSi Schottky barrier diodes. The diode showed nonideal I-V behaviour with an ideality factor of 1.50 and was thought to have a metal-interface layer-semiconductor configuration. Considering that the interface states localized at the interfacial layer-semiconductor interface are in equilibrium with the semiconductor, the energy distribution of the interface states was exactly determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height, θe. The determination of the intercept voltage and interface state density was made by means of a simple interface charge model which has been developed in detail. The I-V characteristics were used for determining the voltage dependence of the barrier height. Although the change in barrier height with applied biasis small, it is important for exactly determining the shape of the interface state density distribution curve. At a frequency of 500 kHz, the nonlinear reverse bias C−2−V plot with the curvature concave downward has been only thought of to be due to the contribution of the capacitance of the interface state charges. It is concluded that the nonlinear nature of C−2−V plots in the frequency range 50–200 kHz has been caused by the interface state charges as well as inversion layer and inversion layer charges. It has been understood by means of the interface state charge model that the C−2−V plots cannot only be interpreted in terms of the contribution of the interface state charges to the device capacitance.

Interpreting the nonideal reverse bias c-v characteristics and importance of the dependence of schottky-barrier height on applied voltage

On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature

Schottky barrier height shifts depending on the interfacial layer as well as a change of the interface state charge with the forward bias while considering the presence of bulk (semiconductor) series resistance are discussed both theoretically and experimentally. It has been concluded that the barrier height shift or increase in Schottky diodes is mainly due to the potential change across the interfacial layer and the occupation of the interface states as a result of the applied forward voltage. One assumes that the barrier height is controlled by the density distribution of the interface states in equilibrium with the semiconductor and the applied voltage. In nonideal Schottky diodes, the values of the voltage drops across the interfacial layer, the depletion layer and the bulk resistance are given in terms of the bias dependent ideality factor, n, different from those in literature. These values are determined by a formula obtained for Vi and Vs by means of change of the interface charge with bias.

https://iopscience.iop.org/article/10.1088/0031-8949/53/1/023/pdf

Mustafa Sağlam

Papers

Interpreting the nonideal reverse bias c-v characteristics and importance of the dependence of schottky-barrier height on applied voltage

On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature

The bias-dependence change of barrier height of Schottky diodes under forward bias by including the series resistance effect

Some electrical properties of polyaniline/p-Si/Al structure at 300K and 77K temperatures

Current–voltage and capacitance–voltage characteristics of polypyrrole/p-InP structure