Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

Selective formation of metallic films on metallic surfaces

Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

Dual selective deposition

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Selective deposition of metals, metal oxides, and dielectrics

Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

Vapor phase deposition of organic films

Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.

Selective deposition on metal or metallic surfaces relative to dielectric surfaces

Trenches in a layer of SiO2 on Si, with feature sizes down to 0.125 μm have been filled with tungsten (W) using selective chemical vapor deposition (CVD). The trenches were formed in a fashion similar to contact vias by reactive ion etching the SiO2 to the underlying silicon. The tungsten was then deposited in a cold wall CVD reactor, by silane reduction of WF6, to a thickness of 0.5 μm. The process results in good planarity and uniformity making it suitable for the fabrication of sub‐0.5 μm contacts and interconnects, and for the formation of high aspect ratio absorbers in x‐ray masks.

N. I. Maluf

Papers

Selective tungsten filling of sub‐0.25 μm trenches for the fabrication of scaled contacts and x‐ray masks