N
N. Lakhdar
Researcher at University of Batna
Publications - 34
Citations - 552
N. Lakhdar is an academic researcher from University of Batna. The author has contributed to research in topics: Solar cell & Threshold voltage. The author has an hindex of 9, co-authored 33 publications receiving 351 citations.
Papers
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Journal ArticleDOI
Electron transport material effect on performance of perovskite solar cells based on CH3NH3GeI3
N. Lakhdar,Abdelkader Hima +1 more
TL;DR: In this article, the effect of different kinds of electron transporting layer (ETL) materials on Ge-perovskite solar cell design is studied and investigated to enhance the conversion efficiency of perovsite devices.
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An optimized perovskite solar cell designs for high conversion efficiency
TL;DR: In this paper, the simulation and optimization of an organic/inorganic perovskite-based photovoltaic solar cell was performed using the ATLAS device simulation software.
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Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges.
TL;DR: This work investigates the scaling capability of Double Gate (DG) and Gate All Around (GAA) MOSFETs using an analytical analysis of the two dimensional Poisson equation in which the hot-carrier induced interface charge effects have been considered and showed that the analytical analysis is in close agreement with the 2-D numerical simulation over a wide range of devices parameters.
Journal ArticleDOI
Enhancement of efficiency and stability of CH3NH3GeI3 solar cells with CuSbS2
Abdelkader Hima,N. Lakhdar +1 more
TL;DR: In this paper, a numerical modeling of methylammonium germanium tri-iodide-based perovskite solar cells using 1D-SCAPS simulation program is reported.
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An optimized design of 10-nm-scale dual-material surrounded gate MOSFETs for digital circuit applications
TL;DR: In this paper, a 10-nm Dual-Material Surrounded Gate MOSFETs (DMSG) was proposed and simulated for nanoscale digital circuit applications and the sub-threshold electrical properties such as subthreshold current-voltage characteristics, sub-reshold swing factor, threshold voltage and drain induced barrier lowering (DIBL) of the device have been ascertained and mathematical models have been developed.