In the present review we summarize original results where 1) we have experimentally discovered a novel class of spontaneously ordered nanostructures, namely equilibrium arrays of threedimensional, coherently strained islands on crystal surfaces; 2) we have developed a theory of spontaneous formation of semiconductor nanostructures in heteroepitaxial systems; 3) we have experimentally demonstrated the existence of a novel class of semiconductor heterostructures, namely perfect quantum dots having an atom-like energy spectrum; we have performed a detailed investigation of the optical properties of quantum dots; 4) we have fabricated quantum dot-based injection lasers demonstrating unique charactristics, namely high-temperature stability of the threshold current and ultra-high material gain.

Quantum dot heterostructures: Fabrication, properties, lasers (Review)

Elastic relaxation on facet edges, renormalization of the surface energy of the facets, and interaction between i&no3 via the strained substrate are the driving forces for self-organization of ordered arrays of uniform coherent three-dimensional is/a& on crystal surfaces. For a (100) surface of a cubic crystal, two-dimensional square lattice of pyramid-like islands (quantum dots) with the periodicity along the directions of the lowest stiffness (OlO) and (OOI) has the minimum energy among different one-dimen- sional and two-dimensional arrays. For the InAs/GaAs(lOO) system, an equilibrium array of dots of the lateral size _ 120-140 A exists in a fixed range of growth parameters. T'he main luminescence peak at 1.1 eV, as well as peaks of excited states coincide in energy with the peaks revealed in the calorimetric absorption spectra regardless of the amount of InAs deposited (2-5 ML). Raman spectra indicate significant strain in InAs dots. The "phonon bottleneck" effect is bypassed via multi-phonon exciton and carrier relaxation. Ultranarrow lines (< 0.15 meV) are observed in cathodoluminescence spectra up to high temperatures. Low threshold current density operation via zero-dimensional states and ultrahigh temperature stability of the threshold current (T, = 450 K) are realized for a quantum dot injection laser. Increase in the gain and significant reduction in the radiative lifetime are possible via the self-organization of vertically-coupled quantum dots (VECODs) arranged in a well ordered artificial three-dimensional tefragonal lattice.

Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing

Quantum-dot (QD) heterostructures are nanoscale coherent insertions of narrow-gap material in a single-crystalline matrix. These tiny structures provide unique opportunities to modify and extend all basic principles of heterostructure lasers and advance their applications. Despite early predictions, fabrication of QD heterostructure (QDHS) lasers appeared to be a much more challenging task, as compared to quantum well (QW) devices. The breakthrough occurred when techniques for self-organized growth of QD's allowed the fabrication of dense arrays of coherent islands, uniform in shape and size, and, simultaneously, free from undesirable defects. Recently, the figure of merit of QDHS lasers surpasses some of the key characteristics of QW devices in some of the most important applications.

Quantum-dot heterostructure lasers

We report structural and optical properties of GaSb/GaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. The QDs, with nanometer-scale dimensions, were characterized by atomic force microscopy. Furthermore, in photoluminescence (PL) measurements the feature from the QDs was observed at ∼1.1 eV, clearly separated from that of the wetting layer at ∼1.3 eV. With increasing excitation power, the peak from the QDs displayed a large shift towards higher energy. In addition, the temperature dependence of PL yielded a large thermal activation energy, 130 meV, confirming the strong localization of excitons in the QDs.

Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy

The authors propose and demonstrate the fabrication of InN∕GaN multiple quantum well (MQW) consisting of 1 ML and fractional monolayer InN well insertion in GaN matrix under In-polarity growth regime. Since the critical thickness of InN epitaxy on GaN is about 1 ML and the growth temperature for 1 ML InN insertion can be remarkably higher, the proposed MQW structure can avoid/reduce generation of misfit dislocation, resulting in higher quality MQW-structure nature in principle than former InN-based MQWs. The proposed InN∕GaN MQWs are potentially applicable to room temperature operating excitonic devices working in short-wavelength visible colors.

Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

We have studied optical properties of staggered band line-up (type-II) heterostructures based on strained GaSb sheets in a GaAs matrix. The giant valence-band offset characteristic to this heterojunction leads to an effective localization of holes in ultrathin GaSb layers. An intense photoluminescence (PL) line caused by radiative recombination of localized holes with electrons located in the nearby GaAs regions is observed. The separation of nonequilibrium electrons and holes in real space results in a dipole layer and, thus, in the formation of quantum wells for electrons in the vicinity of the GaSb layer. The luminescence maximum shifts towards higher photon energies with rising excitation density reflecting the increase in the electron quantization energy. A bimolecular recombination mechanism is revealed in PL and in time-resolved PL studies. In the case of pseudomorphic monolayer-thick GaSb layers, the radiative exciton ground state does not exist. Accordingly, small absorption coefficients and a featureless behavior of the band-to-band calorimetric absoprtion spectrum are found in the vicinity of ${\mathit{k}}_{\mathit{x},}$y=0. Remarkable enhancement of the absorption coefficient with a characteristic onset is observed for heavy holes with ${\mathit{k}}_{\mathit{x},}$yg0. Radiative states in the continuum of heavy-hole subbands are revealed also in temperature-dependent PL studies. The experimentally measured onset energies point out the importance of GaSb heavy- and light-hole mixing effects. We demonstrate intense luminescence from staggered band line-up GaSb-GaAs heterostructures up to room temperature.

N. N. Faleev

Papers

Radiative states in type-II GaSb/GaAs quantum wells.

Energy levels and exciton oscillator strength in submonolayer inas-gaas heterostructures