F
Frank Heinrichsdorff
Researcher at Technical University of Berlin
Publications - 97
Citations - 3529
Frank Heinrichsdorff is an academic researcher from Technical University of Berlin. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 29, co-authored 96 publications receiving 3485 citations. Previous affiliations of Frank Heinrichsdorff include Siemens.
Papers
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Journal ArticleDOI
Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
Frank Heinrichsdorff,Ming-Hua Mao,N. Kirstaedter,Alois Krost,Dieter Bimberg,A. O. Kosogov,Peter Werner +6 more
TL;DR: In this article, a quantum dot (QD) laser made of stacked InAs dots grown by metalorganic chemical vapor deposition (MVD) is reported. But the growth of defect-free binary InAs/GaAs QDs with high lateral density (dl⩾4×1010 cm−2) was achieved in a narrow growth parameter window.
Journal ArticleDOI
Radiative recombination in type-ii gasb/gaas quantum dots
Fariba Hatami,Nikolai N. Ledentsov,Marius Grundmann,J. Böhrer,Frank Heinrichsdorff,M. Beer,Dieter Bimberg,S. S. Ruvimov,Peter Werner,Ulrich Gösele,J. Heydenreich,U. Richter,Stefan Ivanov,B. Ya. Meltser,P. S. Kop’ev,Zh. I. Alferov +15 more
TL;DR: In this paper, a GaSb quantum dot with a staggered band lineup (type II) is formed in a GaAs matrix using molecular beam epitaxy, where the dots are growing in a self-organized way on a GaAS(100) surface.
Journal ArticleDOI
Carrier dynamics in type-II GaSb/GaAs quantum dots
Fariba Hatami,Marius Grundmann,N. N. Ledentsov,Frank Heinrichsdorff,R. Heitz,J. Böhrer,Dieter Bimberg,S. S. Ruvimov,Peter Werner,V. M. Ustinov,P. S. Kop’ev,Zh. I. Alferov +11 more
TL;DR: In this article, the optical properties and dynamics of charge carriers in self-organized arrays of type-II (staggered band lineup) GaSb/GaAs quantum dots are studied.
Journal ArticleDOI
Quantum dot lasers: breakthrough in optoelectronics
Dieter Bimberg,Marius Grundmann,Frank Heinrichsdorff,Nikolai N. Ledentsov,Victor M. Ustinov,A. E. Zhukov,A. R. Kovsh,Mikhail V. Maximov,Y.M. Shernyakov,B. V. Volovik,A. F. Tsatsul’nikov,P. S. Kop’ev,Zh. I. Alferov +12 more
TL;DR: In this article, the authors used the concept of electronically-coupled quantum dots (QDs) and oxide-defined 10 μm apertures for surface-emitting QD lasers (300 K).
Journal ArticleDOI
Radiative states in type-II GaSb/GaAs quantum wells.
Nikolai N. Ledentsov,J. Böhrer,M. Beer,Frank Heinrichsdorff,Marius Grundmann,Dieter Bimberg,Stefan Ivanov,B. Ya. Meltser,S.V. Shaposhnikov,I. N. Yassievich,N. N. Faleev,P. S. Kop’ev,Zh. I. Alferov +12 more
TL;DR: Intense luminescence from staggered band line-up GaSb-GaAs heterostructures up to room temperature is demonstrated and a bimolecular recombination mechanism is revealed in PL and in time-resolved PL studies.