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N. N. Ledentsov
Researcher at Technical University of Berlin
Publications - 215
Citations - 7515
N. N. Ledentsov is an academic researcher from Technical University of Berlin. The author has contributed to research in topics: Quantum dot & Laser. The author has an hindex of 44, co-authored 212 publications receiving 7350 citations. Previous affiliations of N. N. Ledentsov include Russian Academy.
Papers
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Journal ArticleDOI
Low threshold, large To injection laser emission from (InGa)As quantum dots
N. Kirstaedter,N. N. Ledentsov,Marius Grundmann,Dieter Bimberg,V. M. Ustinov,S. S. Ruvimov,Mikhail V. Maximov,Petr S. Kop'ev,Zh. I. Alferov,U. Richter,Peter Werner,Ulrich Gösele,J. Heydenreich +12 more
TL;DR: In this article, a low threshold, large T/sub o/ injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated, which are formed due to a morphological transformation of a pseudomorphic In/sub 0.5/Ga/sub0.5 /As layer.
Journal ArticleDOI
Ultranarrow Luminescence Lines from Single Quantum Dots.
Marius Grundmann,Jürgen Christen,N. N. Ledentsov,J. Böhrer,Dieter Bimberg,S. S. Ruvimov,Peter Werner,U. Richter,Ulrich Gösele,J. Heydenreich,Victor M. Ustinov,A. Yu. Egorov,A. E. Zhukov,P. S. Kop’ev,Zh. I. Alferov +14 more
TL;DR: Thanarrow ultranarrow cathodoluminescence lines originating from single InAs quantum dots in a GaAs matrix for temperatures up to 50 K are reported, directly proving their $\ensuremath{\delta}$-function-like density of electronic states.
Journal ArticleDOI
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth.
N. N. Ledentsov,Vitaly Shchukin,Marius Grundmann,N. Kirstaedter,J. Böhrer,Oliver G. Schmidt,Dieter Bimberg,Victor M. Ustinov,A. Yu. Egorov,A. E. Zhukov,P. S. Kop’ev,Sergey V. Zaitsev,N. Yu. Gordeev,Zh. I. Alferov,A. I. Borovkov,A. O. Kosogov,S. S. Ruvimov,Peter Werner,Ulrich Gösele,J. Heydenreich +19 more
TL;DR: In this paper, a laterally ordered array of nanoscale structures inserted in a GaAs matrix, where each structure is composed of several vertically merging InAs parts, was found to decrease the radiative lifetime and to result in low energy shifts of the corresponding peaks in luminescence and absorption spectra.
Journal ArticleDOI
Carrier dynamics in type-II GaSb/GaAs quantum dots
Fariba Hatami,Marius Grundmann,N. N. Ledentsov,Frank Heinrichsdorff,R. Heitz,J. Böhrer,Dieter Bimberg,S. S. Ruvimov,Peter Werner,V. M. Ustinov,P. S. Kop’ev,Zh. I. Alferov +11 more
TL;DR: In this article, the optical properties and dynamics of charge carriers in self-organized arrays of type-II (staggered band lineup) GaSb/GaAs quantum dots are studied.
Journal ArticleDOI
Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
TL;DR: In this article, a high-power InGaAs/GaAs quantum-dot laser is achieved by the application of an annealing and growth interruption step at 600°C after the deposition of the dots.