N
N. V. Gaponenko
Researcher at Belarusian State University of Informatics and Radioelectronics
Publications - 142
Citations - 1602
N. V. Gaponenko is an academic researcher from Belarusian State University of Informatics and Radioelectronics. The author has contributed to research in topics: Photoluminescence & Luminescence. The author has an hindex of 21, co-authored 130 publications receiving 1438 citations. Previous affiliations of N. V. Gaponenko include Belarusian State University & Polytechnic University of Valencia.
Papers
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Journal ArticleDOI
Photonic band gap phenomenon and optical properties of artificial opals
V. N. Bogomolov,Sergey V. Gaponenko,I. N. Germanenko,A. M. Kapitonov,Eugene P. Petrov,N. V. Gaponenko,A. V. Prokofiev,A. N. Ponyavina,N. I. Silvanovich,S. M. Samoilovich +9 more
TL;DR: In this article, the photonic band gap phenomenon in the visible range in a three-dimensional dielectric lattice formed by close-packed spherical silica clusters was investigated.
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Erbium luminescence in porous silicon doped from spin‐on films
A. M. Dorofeev,N. V. Gaponenko,Vitaly Bondarenko,E. E. Bachilo,N. Kazuchits,A. A. Leshok,G. N. Troyanova,N. N. Vorosov,Victor E. Borisenko,Hubert Gnaser,W. Bock,P. Becker,Hans Oechsner +12 more
TL;DR: Erbium photoluminescence at room temperature and at 77 K has been observed from porous silicon doped with erbium from a spin-on silica gel film.
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Anisotropic Light Scattering in Nanoporous Materials: A Photon Density of States Effect
Andrey A. Lutich,Sergey V. Gaponenko,N. V. Gaponenko,I. S. Molchan,Vitalii A. Sokol,Vitali Parkhutik +5 more
TL;DR: In this article, the authors consider light scattering in porous materials in the context of spectral, spatial, and angular redistribution of photon density of states in materials with pores whose size and spacing are of the order of light wavelength.
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Strongly enhanced Tb luminescence from titania xerogel solids mesoscopically confined in porous anodic alumina
N. V. Gaponenko,J. A. Davidson,Bruce Hamilton,Peter Skeldon,G.E. Thompson,Xiaorong Zhou,J. C. Pivin +6 more
TL;DR: In this article, the optical bands attributed to 5D3→7Fi (i=3,4,5), 5D4→7Fj (i = 3, 4,5,6) transitions of Tb3+, with a predominant band at 2.28 eV, were investigated between 6 and 300 K.
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Impurity-driven defect generation in porous anodic alumina
TL;DR: In this article, the morphologies of porous anodic alumina films are affected significantly by the presence of small amounts of copper impurity in the aluminium substrate, resulting in generation of defects during anodizing in phosphoric acid over a wide range of conditions.