N
Naoki Fukata
Researcher at National Institute for Materials Science
Publications - 248
Citations - 4285
Naoki Fukata is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Nanowire & Silicon. The author has an hindex of 32, co-authored 225 publications receiving 3451 citations. Previous affiliations of Naoki Fukata include Kafrelsheikh University & National Presto Industries.
Papers
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Journal ArticleDOI
Mechanical Properties of Si Nanowires as Revealed by in Situ Transmission Electron Microscopy and Molecular Dynamics Simulations
Dai-Ming Tang,Cuilan Ren,Ming-Sheng Wang,Xianlong Wei,Naoyuki Kawamoto,Chang Liu,Yoshio Bando,Masanori Mitome,Naoki Fukata,Dmitri Golberg +9 more
TL;DR: It was revealed that the mechanical behavior of Si NWs had been closely related to the wire diameter, loading conditions, and stress states, and the tensile strength showed a clear size dependence.
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Hydrogen Molecules in Crystalline Silicon Treated with Atomic Hydrogen.
Kouichi Murakami,Naoki Fukata,Shinichi Sasaki,Kunie Ishioka,Masahiro Kitajima,Shuzo Fujimura,Jun Kikuchi,Hajime Haneda +7 more
TL;DR: The first observation of the vibrational Raman spectrum of hydrogen molecules in silicon at room temperature was reported in this paper, where the frequency shifts of the observed lines were in close agreement with those reported for the gas, liquid, and solid phases.
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Enhanced photodegradation of methyl orange with TiO2 nanoparticles using a triboelectric nanogenerator
Yuanjie Su,Yuanjie Su,Ya Yang,Hulin Zhang,Yannan Xie,Zhiming Wu,Yadong Jiang,Naoki Fukata,Yoshio Bando,Zhong Lin Wang,Zhong Lin Wang +10 more
TL;DR: A polytetrafluoroethylene-Al based triboelectric nanogenerator (TENG) whose electric power output can be used for enhancing the photodegradation of MO with the presence of TiO₂ nanoparticles, because the TENG generated electric field can effectively boost the separation and restrain the recombination of photo-generated electrons and holes.
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Doping and Raman characterization of boron and phosphorus atoms in germanium nanowires.
Naoki Fukata,Naoki Fukata,Keisuke Sato,Masanori Mitome,Yoshio Bando,Takashi Sekiguchi,Melanie J. Kirkham,Jung-Il Hong,Zhong Lin Wang,Robert L. Snyder +9 more
TL;DR: A three step process was found to be useful, namely growth of GeNWs followed by the deposition of an amorphous Ge layer with high B concentration and then annealing, which can be a useful technique for the characterization of semiconductor nanowire devices.
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Hot Electron Excitation from Titanium Nitride Using Visible Light
TL;DR: In this article, the authors demonstrate that titanium nitride (a conductive ceramic) can be used as an alternative for photoexciting hot carriers, which is a major strategy that has been used to inject carriers into wideband gap materials.