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Naoki Watanabe

Researcher at National Institute of Advanced Industrial Science and Technology

Publications -  47
Citations -  1467

Naoki Watanabe is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Magnetoresistance & Layer (electronics). The author has an hindex of 10, co-authored 47 publications receiving 1399 citations.

Papers
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Journal ArticleDOI

230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions

TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI

Giant tunneling magnetoresistance effect in low-resistance CoFeB∕MgO(001)∕CoFeB magnetic tunnel junctions for read-head applications

TL;DR: In this paper, the giant tunneling magnetoresistance effect has been achieved in low-resistance CoFeB∕MgO(001)∕CoFeB magnetic tunnel junctions (MTJ) at room temperature.
Journal ArticleDOI

Tunneling spectra of sputter-deposited CoFeB/MgO/CoFeB magnetic tunnel junctions showing giant tunneling magnetoresistance effect

TL;DR: In this article, the authors measured differential tunneling conductance (d I/d V, d 2 I /d V 2 ) spectra of spin-valve-type magnetic tunnel junctions (MTJs) with a MgO(001) tunnel barrier layer and amorphous CoFeB ferromagnetic electrodes that show 315% magnetoresistance (MR) ratio at 4.3
Patent

Method, systems and computer program products for checking the validity of data

TL;DR: In this paper, a data verifying system is installed in a network interconnecting the data requesting system and data providing system, which checks whether verification data for supplied data matches the supplied data.
Patent

Multilayer film deposition apparatus, and method and apparatus for manufacturing perpendicular-magnetic-recording media

TL;DR: In this article, a multi-layer film deposition apparatus is described, consisting of a main rotation mechanism for rotating each cathode together, and a substrate holder to hold a substrate onto which a multilayer film is deposited by sputtering.