Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
- Vol. 86, Iss: 9, pp 092502
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TLDR
The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.Abstract:
The magnetoresistance ratio of 230% at room temperature is reported. This was achieved in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates. The amorphous CoFeB electrodes are of great advantage to the polycrystalline FeCo electrodes in achieving a high homogeneity in small 100 nm-sized MTJs.read more
Citations
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Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
Shoji Ikeda,Jun Hayakawa,Yoshito Ashizawa,Y. M. Lee,Katsuya Miura,Katsuya Miura,H. Hasegawa,Masakiyo Tsunoda,F. Matsukura,Hideo Ohno +9 more
TL;DR: In this article, the authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300K in Ta∕Co20Fe60B20∕MgO∕SiO2 or Co20Fe 60B20 ∕Ta pseudo-spin-valve magnetic tunnel junction junction annealed at 525°C.
Journal ArticleDOI
Electric-field-assisted switching in magnetic tunnel junctions
TL;DR: Electric-field-assisted reversible switching in CoFeB/MgO/CoFeB magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy is reported, where the coercivity, the magnetic configuration and the tunnelling magnetoresistance can be manipulated by voltage pulses associated with much smaller current densities.
Journal ArticleDOI
Spin-torque diode effect in magnetic tunnel junctions
Ashwin Tulapurkar,Ashwin Tulapurkar,Yoshishige Suzuki,Yoshishige Suzuki,Akio Fukushima,Hitoshi Kubota,H. Maehara,K. Tsunekawa,David D. Djayaprawira,Naoki Watanabe,Shinji Yuasa +10 more
TL;DR: In this paper, it was shown that the application of a small radio-frequency alternating current to a nanometre-scale magnetic tunnel junction can generate a measurable direct current (d.c.) voltage across the device when the frequency is resonant with the spin oscillations that arise from the spin-torque effect.
Journal ArticleDOI
Spintronics based random access memory: a review
Sabpreet Bhatti,Rachid Sbiaa,Atsufumi Hirohata,Hideo Ohno,Shunsuke Fukami,S. N. Piramanayagam +5 more
TL;DR: This article reviews spintronics based memories, in particular, magnetic random access memory (MRAM) in a systematic manner and discusses some of the future technologies that might help the industry to move beyond the conventional MRAM technology.
Journal ArticleDOI
Current Sensing Techniques: A Review
TL;DR: A thorough review of state-of-the-art current sensing techniques can be found in this article, where the authors catalog the current sensors according to the underlying physical principle in order to point out their strengths and weaknesses.
References
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Journal ArticleDOI
Tunneling between ferromagnetic films
TL;DR: In this article, the mean magnetizations of the two ferromagnetic film are parrallel or antiparallel and conductance measurement is related to the spin polarizations of conduction electrons.
Journal ArticleDOI
Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions.
TL;DR: b, R/R, is 11.8%, 20%, and 24%, respectively, consistent with Julliere's model based on the spin polarization of the conduction electrons of the magnetic films, in qualitative agreement with Slonczewski's model.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
Spin-dependent tunneling conductance of Fe | MgO | Fe sandwiches
TL;DR: In this paper, first-principles based calculations of the tunneling conductance and magnetoconductance of epitaxial ''mathrm{Fe}(100)|\mathm{MgO''(100), ''mgO''.