Nico Lovergine

TL;DR: In this article, the Schottky-contacted core/shell GaAs/AlGaAs and bare GaAs nanowires were fabricated and characterized for high-speed metal-semiconductor-metal (MSM) photodetectors.

TL;DR: In this article, the photodetection properties of individual core/shell GaAs/AlGaAs nanowires and their behavior under linearly polarized light were investigated and high quantum efficiency values (10% at 600 nm) were obtained which are attractive for a wide range of optoelectronic devices.

TL;DR: In this article, local electron beam induced deposition is shown to be a reliable and facile route for producing robust electrical contacts to individual vapor phase-grown nanowires in a manner that enables study of their actual carrier transport properties.

TL;DR: In this paper, the functional potentials of a single GaAs-AlGaAs core-multishell nanowire were derived by combining EHT and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) tomography.

TL;DR: In this article, the structural characterization of ZnTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy is reported, where both pure edge Lomer and 60°mixed misfit dislocations are identified at the interface along with partial dislocation bounding stacking faults, their overall density and distance distribution indicating the occurrence of a residual compressive strain at the heterostructure interface.